Patent classifications
G03F7/20
Salt, acid generator, resist composition and method for producing resist pattern
A salt represented by formula (I): ##STR00001##
wherein Q.sup.1 and Q.sup.2 each independently represent a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, z represents an integer of 0 to 6, X.sup.1 represents *—O—, *—CO—O— or *—O—CO—, * represents a binding site to CR.sup.1R.sup.2 or CQ.sup.1Q.sup.2, L.sup.1 represents a C.sub.1 to C.sub.6 alkanediyl group, R.sup.3 represents a C.sub.5 to C.sub.18 alicyclic hydrocarbon group in which a hydrogen atom may be replaced by a hydroxy group, and in which a methylene group may be replaced by an oxygen atom or a carbonyl group, and which alicyclic hydrocarbon group may have a cyclic ketal structure optionally having a fluorine atom; and Z.sup.+ represents an organic cation.
Systems and methods for generating drop patterns
Devices, systems, and methods (a) receive a predetermined fluid drop volume and an array of cells, wherein each cell in the array is associated with a respective predetermined fluid volume; (b) scan the array of cells according to a scanning sequence for a next unassigned cell and add the next unassigned cell to a respective fill set; (c) add unassigned cells neighboring the next unassigned cell to the respective fill set until an aggregate of the respective predetermined fluid volumes of the cells in the respective fill set equals or exceeds the predetermined fluid drop volume; (d) place a fluid drop in the drop pattern within an area associated with the respective fill set and mark all cells in the respective fill set as assigned; and (e) repeat (b)-(d) until all cells in the array of cells have been assigned and the drop pattern has been generated.
Stage apparatus and method for calibrating an object loading process
The invention provides a stage apparatus, comprising an object support comprising a ring shaped protrusion having an outer radius in a first plane, and configured to support an object with a radius in the first plane larger than the outer radius of the ring shaped protrusion. The stage apparatus further comprises a sensor module configured to detect the object support, and the object when it is arranged on the object support. The stage apparatus further comprises a processing unit configured to receive one or more signals from the sensor module, and to determine, based on said one or more signals, a position of the object relative to the ring shaped protrusion when the object is arranged on the object support. The processing unit is further configured to determine, based on said position of the object, an offset value representing the position of the object relative to the ring shaped protrusion.
Method of calibrating a plurality of metrology apparatuses, method of determining a parameter of interest, and metrology apparatus
Methods for calibrating metrology apparatuses and determining a parameter of interest are disclosed. In one arrangement, training data is provided that comprises detected representations of scattered radiation detected by each of plural metrology apparatuses. An encoder encodes each detected representation to provide an encoded representation, and a decoder generates a synthetic detected representation from the respective encoded representation. A classifier estimates from which metrology apparatus originates each encoded representation or each synthetic detected representation. The training data is used to simultaneously perform, in an adversarial relationship relative to each other, a first machine learning process involving the encoder or decoder and a second machine learning process involving the classifier.
Wafer stage and method thereof
A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.
Detection system for an alignment sensor
A detection system for an alignment sensor, and an alignment sensor and lithographic projection apparatus comprising such a detection system is disclosed. The detection system comprises at least one detection circuit; and a plurality of optical fiber cores for transporting a measurement signal to the at least one detection circuit. At least as subset of the plurality of optical fiber cores are selectively switchable between a detection state and a non-detection state, thereby defining a configurable detection spot.
Charged particle source module
The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.
Using mask fabrication models in correction of lithographic masks
A lithography process is described by a design for a lithographic mask and a description of the lithography configuration, which may include the lithography source, collection/illumination optics, projection optics, resist, and/or subsequent fabrication steps. The actual lithography process uses a lithographic mask fabricated from the mask design, which may be different than the nominal mask design. A mask fabrication model models the process for fabricating the lithographic mask from the mask design. Typically, this is an electron-beam (e-beam) process, which includes e-beam exposure of resist on a mask blank, processing of the exposed resist to form patterned resist, and etching of the mask blank with the patterned resist. The mask fabrication model, usually in conjunction with other process models, is used to estimate a result of the lithography process. Mask correction is then applied to the mask design based on the simulation result.
Substrate support, lithographic apparatus and loading method
A substrate support for supporting a substrate. The substrate support comprises a main body, a clamping device and a dither device. The main body comprises a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate W is being loaded onto the support surface.
Proximity effect correction in electron beam lithography
A method of generating a layout pattern includes determining a first energy density indirectly exposed to a first feature of one or more features of a layout pattern on an energy-sensitive material when the one or more features of the layout pattern on the energy-sensitive material are directly exposed by a charged particle beam. The method also includes adjusting a second energy density exposed the first feature when the first feature is directly exposed by the charged particle beam. A total energy density of the first feature that comprises a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure is maintained at about a threshold energy level to fully expose the first feature in the energy-sensitive material.