A compound represented by the following formula (1):

##STR00001## wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R.sup.1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R.sup.2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R.sup.2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.

In a method for producing a wired circuit board includes a step (1), in which the insulating layer having an inclination face is provided; a step (2), in which a metal thin film is provided on the surface of the insulating layer including the inclination face; a step (3), in which a photoresist is provided on the surface of the metal thin film; a step (4), in which a photomask is disposed so that a first light exposure portion and a second light exposure portion in the photoresist are exposed to light, and the photoresist is exposed to light; a step (5), in which the first light exposure portion and the second light exposure portion are removed; and a step (6), in which the first wire and the second wire are provided on the surface of the metal thin film.

In a method for producing a wired circuit board includes a step (1), in which the insulating layer having an inclination face is provided; a step (2), in which a metal thin film is provided on the surface of the insulating layer including the inclination face; a step (3), in which a photoresist is provided on the surface of the metal thin film; a step (4), in which a photomask is disposed so that a first light exposure portion and a second light exposure portion in the photoresist are exposed to light, and the photoresist is exposed to light; a step (5), in which the first light exposure portion and the second light exposure portion are removed; and a step (6), in which the first wire and the second wire are provided on the surface of the metal thin film.

A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): ##STR00001##
and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): ##STR00002##
where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): ##STR00001##
and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): ##STR00002##
where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times. ##STR00001##

A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times. ##STR00001##

A method of forming a device includes forming a hard mask layer over an underlying layer of a substrate, forming an anti-reflective coating layer over the hard mask layer, forming a patterned resist layer over the anti-reflective coating layer, and forming a mandrel including the anti-reflective coating layer by patterning the anti-reflective coating layer using the patterned resist layer as an etch mask. The method includes forming a sidewall spacer on the mandrel including the anti-reflective coating layer, forming a freestanding spacer on the hard mask layer by removing the mandrel from the anti-reflective coating layer, and using the freestanding spacer as an etch mask, patterning the underlying layer of the substrate.

A method of forming a device includes forming a hard mask layer over an underlying layer of a substrate, forming an anti-reflective coating layer over the hard mask layer, forming a patterned resist layer over the anti-reflective coating layer, and forming a mandrel including the anti-reflective coating layer by patterning the anti-reflective coating layer using the patterned resist layer as an etch mask. The method includes forming a sidewall spacer on the mandrel including the anti-reflective coating layer, forming a freestanding spacer on the hard mask layer by removing the mandrel from the anti-reflective coating layer, and using the freestanding spacer as an etch mask, patterning the underlying layer of the substrate.

The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1). ##STR00001##
(in formula (1), each X independently represents an oxygen atom or a sulfur atom, R.sup.1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, and each R.sup.2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R.sup.2 represents a hydroxyl group, each m is independently an integer of 1 to 4, n is an integer of 1 to 4, and p is 0 or 1.)