Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

A method of transferring a pattern to a photosensitive material comprises aligning a display with a substrate by using an image sensor or camera, and showing the pattern in the display. The display may have a physical alignment mark, or alignment marks with a color having a wavelength that does not cause the photosensitive material to react. The pattern to be transferred is adjusted to stay aligned with substrate features and then shown on the display. The display sweeps at least part of the substrate while the content of the display is scrolling to cover the pattern to be transferred. The speed of sweeping and scrolling is controlled by the required exposure time.

An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.

A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.

There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

A movable body apparatus that moves a substrate equipped with: a substrate holder which can move in the X-axis and the Y-axis directions; a Y coarse movement stage can move in the Y-axis direction, a first measurement system acquiring position information on the substrate holder with heads provided at the substrate holder and a scale provided at the Y coarse movement stage; a second measurement system acquiring position information on the Y coarse movement stage with heads at the Y coarse movement stage and a scale; and a control system controlling the position of the substrate holder based on position information acquired by the first and the second measurement systems, and the first measurement system irradiates a measurement beam on the scale while moving the heads in the X-axis direction, and the second measurement system irradiates a measurement beam on the scale while moving the heads in the Y-axis direction.

A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.

An apparatus for securing a printing screen frame is configured so that, when a piston rod moves backward due to the supply of air pressure, tensile force applied to a support frame of a printing screen unit by a coupling protrusion of a tension member is released and the printing screen unit can be replaced, and, when the piston rod moves forward as an elastic spring extends due to the stop of the supply of the air pressure, the coupling protrusion of the tension member is caught on the support frame of the printing screen unit and applies pressure thereto due to elastic force so as to tension the printing screen, and then reverse pressure can be applied thereto by using air pressure, as needed.