Multi-film containers for use in additive fabrication devices are provided. According to some aspects, a container may include multiple films that are at least partially detached from one another. In some embodiments, the multiple films may include films formed from different materials. As one example, an upper film may be formed so as to be relatively impermeable to substances within a source material of an additive fabrication device, whereas a lower film may be formed so as to provide desirable mechanical properties. In some cases, the multiple films may be commonly tensioned while being unattached to one another.

An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

Techniques for directing light from a movable stage in an additive fabrication device are provided. According to some aspects, the movable stage may include a parabolic mirror onto which light may be directed at various different incident angles to produce light along different positions along an axis. In some cases, this axis may be perpendicular to a direction of motion of the movable stage.

Techniques for directing light from a movable stage in an additive fabrication device are provided. According to some aspects, the movable stage may include a parabolic mirror onto which light may be directed at various different incident angles to produce light along different positions along an axis. In some cases, this axis may be perpendicular to a direction of motion of the movable stage.

Techniques for force sensing in additive fabrication are provided. According to some aspects, an additive fabrication device may include a force sensor configured to measure a force applied to a build platform during fabrication. A length of time taken for a layer of material to separate from a surface other than the build platform to which it is adhered may be determined based on measurements from the force sensor. Subsequent additive fabrication operations, such as subsequent motion of the build platform, may be adapted based on the determined length of time.

Techniques for force sensing in additive fabrication are provided. According to some aspects, an additive fabrication device may include a force sensor configured to measure a force applied to a build platform during fabrication. A length of time taken for a layer of material to separate from a surface other than the build platform to which it is adhered may be determined based on measurements from the force sensor. Subsequent additive fabrication operations, such as subsequent motion of the build platform, may be adapted based on the determined length of time.

Sensor devices and corresponding methods are provided. When a signal path output (COMP OUT) indicates no threshold crossings, diagnosis is performed with a timing based on a clock. In case threshold crossings are indicated, diagnosis is performed with a timing based on threshold crossings.

Sensor devices and corresponding methods are provided. When a signal path output (COMP OUT) indicates no threshold crossings, diagnosis is performed with a timing based on a clock. In case threshold crossings are indicated, diagnosis is performed with a timing based on threshold crossings.

An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

An in-situ delay measurement is performed for an envelope-tracking power amplifier of an RF input signal. Because the delay measurement is in-situ, the delay measurement avoids the necessity to down convert and digitize a version of an RF output signal from the envelope-tracking power amplifier.