A simulation method for the management of a pipeline network having input and output nodes (S.sub.1, S.sub.2, C.sub.1) and including defining operating states describing operating conditions of the pipeline network, determining, for each operating state ST.sub.p, a three-dimensional dynamic matrix DM.sub.ST.sub.p whose each coefficient DM.sub.ST.sub.p(i,j,t.sub.k) corresponds to a pressure variation value from an initial pressure value at a j-th node at a k-th time step t.sub.k following a variation, at a i-th node, of a flow rate value, and estimating, for a given node at a given moment, a pressure value on the basis of an operating schedule providing information regarding variations of the flow rate value for each node and evolutions of the operating conditions of the pipeline network until the given moment, the estimation using the operating states and the three-dimensional dynamic matrices.

A smart render design tool includes: (a) a designer side plug-in enabling a designer to generate credentials for a client and associate the credentials with a model for the client, add camera view(s) to the model, select one or more surfaces in the camera view(s) to add in the model, specify one or more materials for each surface of the one or more surfaces of the model, and publish the model including the specified materials for the one or more surfaces of the model; and (b) a client side portal associated with the credentials and the model enabling the client to access the published model using the generated credentials, select desired materials from among the materials specified by the designer for each surface of the published model, and save the desired materials selections of the client for review by the designer using a synchronization function of the designer side plug-in.

The present disclosure is directed to numerically estimating the shear modulus of Kerogen by using a combination of mineralogy from digital image analysis and sonic log analysis, when measured data on only one elastic constant (Bulk, Young's or P-wave modulus) is available. In some instances, elastic properties predicted from the digital images are compared with sonic, shear, and density logs, to estimate the shear modulus of kerogen. As a one-to-one correspondence is not expected between the core sub-samples and the rock unit sampled by the well logs, cross-property relations can be used to identify the suitability of the effective medium models and to iteratively determine the shear modulus of kerogen.

Computing systems and technical methods that transform data structures and pierce opacity difficulties associated with complex machine learning modules are disclosed. Advances include a framework and techniques that include: i) global diagnostics; ii) locally interpretable models LIME-SUP-R and LIME-SUP-D; and iii) explainable neural networks. Advances also include integrating LIME-SUP-R and LIME-SUP-D approaches that create a transformed data structure and replicated modeling over local and global effects and that yield high interpretability along with high accuracy of the replicated complex machine learning modules that make up a machine learning application.

A method for formation evaluation may comprise forming one or more model parameters from one or more priori geological information and one or more downhole measurements, identifying one or more inversion controls, and performing a forward model operation using a piecewise polynomial model (PPM). The method may further comprise performing an optimization using at least the forward model operation, the one or more model parameters, and the one or more inversion controls, determining if a misfit between the one or more downhole measurements and the one or more model parameters is greater than or less than a threshold, and updating the forward model operation or the one or more priori geological information based at least in part on the misfit.

A method for generating a more accurate mesh that represents a 3D printed part based on a model includes slicing the model into layers and identifying an infill-wall boundary and an exterior-interior boundary of each layer of the model. Layers of the model may be identified as critical by iterative comparison with adjacent layers. An interior voxel mesh may be constructed based on common two-dimensional reference grids imposed on the critical layers. The interior voxel mesh may be augmented to an augmented mesh and then extended to a protomesh. The protomesh may be extruded to construct the final mesh, which may be analyzed by finite element analysis. The part may be 3D printed based on the layers output by the slicing operation.

Systems and techniques that facilitate Hamiltonian simulation based on simultaneous-diagonalization are provided. In various embodiments, a partition component can partition one or more Pauli operators of a Hamiltonian into one or more subsets of commuting Pauli operators. In various embodiments, a diagonalization component can generate one or more simultaneous-diagonalization circuits corresponding to the one or more subsets. In various aspects, a one of the one or more simultaneous-diagonalization circuits can diagonalize the commuting Pauli operators in a corresponding one of the one or more subsets. In various embodiments, an exponentiation component can generate one or more exponentiation circuits corresponding to the one or more subsets. In various aspects, a one of the one or more exponentiation circuits can exponentiate the simultaneously diagonalized commuting Pauli operators in a corresponding one of the one or more subsets. In various embodiments, a simulation component can concatenate the one or more simultaneous-diagonalization circuits, the one or more exponentiation circuits, and one or more adjoints of the one or more simultaneous-diagonalization circuits of the one or more subsets to simulate a time evolution of the Hamiltonian.

Obtain a putative design for a vapor chamber lid for an electronic device; iteratively: obtain a steady state solution of governing equations of the putative design, wherein the governing equations include a thermal energy equation in a solid domain of the putative design and include continuity, momentum, and energy equations in vapor and liquid/wick domains of the putative design; modify the putative design in response to a difference between the evaporator temperature of the steady state solution and a threshold value for evaporator temperature; and obtain a new steady state solution of the governing equations for the putative design; and set a final design for the vapor chamber lid when a satisfactory result is obtained for the difference between the evaporator temperature and the threshold value for evaporator temperature.

A method for providing a real-time-capable simulation for control unit development, wherein the real-time-capable simulation simulates a control unit or an environment of a control unit or a combination of a control unit and an environment of the control unit. The real-time-capable simulation has a co-simulation of a real-time-capable sub-simulation and a non-real-time-capable sub-simulation that interacts with the real-time-capable sub-simulation, wherein the real-time-capable sub-simulation and the non-real-time-capable sub-simulation are designed for communication of simulation data. The real-time-capable sub-simulation has a first simulation time corresponding to real time and the non-real-time-capable sub-simulation has a virtual, second simulation time that is coupled to the first simulation time and that matches the first simulation time at the start of the real-time-capable simulation.

Pattern centric process control is disclosed. A layout of a semiconductor chip is decomposed into a plurality of intended circuit layout patterns. For the plurality of intended circuit layout patterns, a corresponding plurality of sets of fabrication risk assessments corresponding to respective ones of a plurality of sources is determined. Determining a set of fabrication risk assessments for an intended circuit layout pattern comprises determining fabrication risk assessments based at least in part on: simulation of the intended circuit layout pattern, statistical analysis of the intended circuit layout pattern, and evaluation of empirical data associated with a printed circuit layout pattern. A scoring formula is applied based at least in part on the sets of fabrication risk assessments to obtain a plurality of overall fabrication risk assessments for respective ones of the plurality of intended circuit layout patterns. The plurality of intended circuit layout patterns is ranked based on their fabrication risk assessments, the corresponding overall fabrication risk assessments, or both. At least a portion of ranking information is outputted to facilitate influence or control over the semiconductor fabrication process.