Patent classifications
G06F2117/06
INCREMENTAL GENERATION OF AN FPGA IMPLEMENTATION WITH A GRAPH-BASED SIMILARITY SEARCH
A method for generating an FPGA implementation based on an FPGA design serving as an FPGA model and/or a hardware description, including the steps of synthesizing a net list from the FPGA design and generating the FPGA implementation from the net list. The method includes searching for a similar FPGA implementation, the step of generating the FPGA implementation from the net list takes place using the similar FPGA implementation, the method includes a step of generating a graph-based representation based on the FPGA design, and the step of searching for a similar FPGA implementation comprises comparing the graph-based representation of the FPGA design with a graph-based representation of the at least one similar FPGA implementation. A method for generating a bit stream based on an FPGA design is also provided, serving as an FPGA model and/or a hardware description.
Safety analysis system for wiring
A safety analysis system for wiring, including: a storage unit that stores electric wire-terminal connector correlation information in which each of a plurality of electric wires and a pair of connectors are correlated with each other, terminal connector-function correlation information in which the pair of connectors located at terminals and a function of a device to which the connectors are connected are correlated with each other, and function determination information including a combination of a plurality of functions that are not allowed to be lost at the same time; and a processing unit that matches the electric wire-terminal connector correlation information and the terminal connector-function correlation information when the wire harness is identified, and generates electric wire-function correlation information in which each of the plurality of electric wires and the function of the device are correlated with each other.
ELECTRICAL MASK VALIDATION
An embodiment of the invention may include a method for ensuring semiconductor design integrity. The method may include analyzing a photomask design for a semiconductor circuit. The photomask may include a primary electrical design necessary for the operation of the semiconductor circuit, and white space, which has no primary electrical design. The method may include inserting a secondary electrical design into the white space of the photomask design for the semiconductor circuit. The secondary electrical design may have known electrical properties for validating the semiconductor circuit design.
INTEGRATED CIRCUIT WITH DUMMY BOUNDARY CELLS
Integrated circuits (IC) are provided. An IC includes a plurality of macros and a top channel arranged between the macros. Each macro includes a plurality of transistors with different gate lengths. The top channel includes a plurality of first and second sub-channels. Each first sub-channel is arranged between a first macro and a second macro, and is formed by a plurality of first dummy boundary cells. Each second sub-channel is arranged between two of the second macros, and is formed by a plurality of second dummy boundary cells. The macro boundaries of the first macros are formed by the first dummy boundary cells, and the macro boundaries of the second macros are formed by the second dummy boundary cells. A first gate length of dummy patterns within the first dummy boundary cells is different from a second gate length of dummy patterns within the second dummy boundary cells.
ENGINEERING CHANGE ORDER (ECO) CELL ARCHITECTURE AND IMPLEMENTATION
Engineering change order (ECO) cell architecture and implementation is disclosed. In particular, exemplary aspects disclosed herein provide a generic cell structure that may be readily modified to effect an ECO without requiring extensive mask changes beyond one or two levels including the level in which the cell is located. Further, this generic cell structure can be parked fairly deep in the manufacturing process, such as in the middle-end-of-line (MEOL), so that fewer changes to other masks are needed in the event of a change. The generic cell may further act as a filler cell for pattern density. Inclusion of such a generic cell in a circuit design can help alleviate the need for extensive mask redesign and accompanying delays in the production of finished silicon.
SYSTEM AND METHOD FOR ANTI REVERSE ENGINEERING FOR ANALOG INTEGRATED CIRCUIT
Systems and methods of restraining reverse engineering process for analog integrated circuit use techniques of adding dummy devices, device fragmentation, increasing bus width, employing different layouts for the same circuit element and mixing different types of passive devices increase complexity and makes the layout floorplan more difficult to be extracted for the reverse engineering. The system adds dummy devices and ensures the extra devices and capacitance do not affect the target circuit performance.
Method and apparatus for placing and routing partial reconfiguration modules
A method for designing a system on a target device includes assigning resources on the target device to static logic modules and partial reconfigurable (PR) modules in the system. The instances of one of the PR modules are placed and routed in parallel utilizing resources from those that are assigned. Other embodiments are also disclosed.
Dummy fin cell placement in an integrated circuit layout
In a method of forming an integrated circuit (IC) layout, an empty region in the IC layout is identified by a processor circuit, wherein the empty region is a region of the IC layout not including any active fins. A first portion of the empty region is filled with a first plurality of dummy fin cells, wherein each of the first plurality of dummy fin cells is based on a first standard dummy fin cell, and wherein the first standard dummy fin cell has a first gate width and comprises a first plurality of partitions. A second portion of the empty region is filled with a second plurality of dummy fin cells, wherein each of the second plurality of dummy fin cells is based on a second standard dummy fin cell, and wherein the second standard dummy fin cell has a second gate width and comprises a second plurality of partitions.
METHODS FOR HANDLING INTEGRATED CIRCUIT DIES WITH DEFECTS
A method of handling integrated circuit dies with defects is provided. After forming a plurality of dies on one or more silicon wafers, test equipment may be used to identify defects on the dies and to create corresponding defect maps. The defect maps can be combined to form an aggregate defect map. Circuit design tools may create keep-out zones from the aggregate defect map and run learning experiments on each die, while respecting the keep-out zones, to compute design metrics. The circuit design tools may further create larger keep-out zones and run additional learning experiments on each die while respecting the larger keep-out zones to compute additional design metrics. The dies can be binned into different Stock Keeping Units (SKUs) based on one or more of the computed design metrics. Circuit design tools automatically respect the keep-out regions for these dies to program them correctly in the field.
Dummy fin cell placement in an integrated circuit layout
In a method of forming an integrated circuit (IC) layout, an empty region in the IC layout is identified by a processor circuit, wherein the empty region is a region of the IC layout not including any active fins. A first portion of the empty region is filled with a first plurality of dummy fin cells, wherein each of the first plurality of dummy fin cells is based on a first standard dummy fin cell, and wherein the first standard dummy fin cell has a first gate width and comprises a first plurality of partitions. A second portion of the empty region is filled with a second plurality of dummy fin cells, wherein each of the second plurality of dummy fin cells is based on a second standard dummy fin cell, and wherein the second standard dummy fin cell has a second gate width and comprises a second plurality of partitions.