The present disclosure provides a semiconductor device. The semiconductor device includes: a first cell, a dielectric layer, and a snorkel structure. The first cell has an output terminal. The dielectric layer is disposed on the first cell. The snorkel structure is disposed in the dielectric layer. The snorkel structure includes a first conductive structure, a first conductive layer, and a second conductive structure. The first conductive layer is electrically connected to the output terminal of the cell. The first conductive layer is disposed on and electrically connected to the first conductive structure. The second conductive structure is disposed on and electrically connected to the first conductive layer. The second conductive structure has a topmost conductive layer buried in the dielectric layer.

A method for assembling heterogeneous components. The assembly process includes using a vacuum based pickup mechanism in conjunction with sub-nm precise moir alignment techniques resulting in highly accurate, parallel assembly of feedstocks.

Methods and systems for performing post clock tree synthesis of a clock tree. The methods and systems access, from memory, a circuit design comprising a clock tree that interconnects a clock source to a plurality of clock sinks, each clock sink in the plurality of clock sinks having an associated target insertion delay adjustment, the clock tree comprising a restriction on a quantity of levels of components for respectively adding delay to the clock source. The methods and systems identify an individual target insertion delay adjustment associated with an individual clock sink of the plurality of clock sinks and compare the individual target insertion delay adjustment to a threshold value. The methods and systems selectively remove the restriction on the quantity of levels of components to provide the individual target insertion delay adjustment based on comparing the individual target insertion delay adjustment to the threshold value.

A semiconductor device includes a cell coupled between the output terminal of the first scan flip-flop circuit and the input terminal of the second scan flip-flop circuit. The cell has a plurality of logic gates. The semiconductor device also includes a snorkel structure having a first conductive structure and a second conductive structure. The first conductive structure is connected to the output terminal of the first scan flip-flop circuit. The second conductive structure has a topmost conductive layer buried in a dielectric layer of the semiconductor device.

Techniques relating to identifying an antenna violation for a first local clock buffer (LCB) for an integrated circuit (IC). The IC includes a first LCB block containing the first LCB and a first antenna diode disconnected from the first LCB, and a second LCB block containing a second LCB and a second antenna diode, different from the first antenna diode, disconnected from the second LCB. The techniques include determining, based on the identifying the antenna violation, to connect the first antenna diode to the first LCB, and connecting the first antenna diode to the first LCB in the first LCB block. The second antenna diode remains disconnected from the second LCB after the connecting.

A method for assembling heterogeneous components. The assembly process includes using a vacuum based pickup mechanism in conjunction with sub-nm precise moir alignment techniques resulting in highly accurate, parallel assembly of feedstocks.

A method for assembling heterogeneous components. The assembly process includes using a vacuum based pickup mechanism in conjunction with sub-nm precise moir alignment techniques resulting in highly accurate, parallel assembly of feedstocks.

A method for assembling heterogeneous components. The assembly process includes using a vacuum based pickup mechanism in conjunction with sub-nm precise moir alignment techniques resulting in highly accurate, parallel assembly of feedstocks.