Methods, systems and computer program products for avoiding Boolean DRC failures during cell placement are provided. Aspects include generating a semiconductor layout by filling a plurality of rows within a macro block with cells including functional cells and fill cells. Aspects also include modifying the semiconductor layout by removing one or more fill cells from the macro block to create a gap. Aspects also include examining a set of cells that border edges of the gap to identify one or more predicted rule violations. Based on the identified one or more predicted rule violations, aspects also include modifying the semiconductor layout to change a shape of the gap to avoid the one or more predicted rule violations.

A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.

Electronic design automation systems, methods, and media are presented for multi-dimension clock gate design in clock tree synthesis. In one embodiment, an input list of clock gate types is accessed, and the list is then used in generating a clock gate matrix. A circuit design with a clock tree is then accessed. The multi-dimensional design involves automatically selecting, for a first clock gate of the routing tree, a first clock gate type from the clock gate matrix based on a size and associated area for the first clock gate type to select a drive strength value for the first clock gate in the routing tree. The first clock gate is then resized to generate a resized first clock gate using the clock gate matrix to adjust a first delay value associated with the first clock gate while maintaining the drive strength value.

Methods, systems and computer program products for avoiding Boolean DRC failures during cell placement are provided. Aspects include generating a semiconductor layout by filling a plurality of rows within a macro block with cells including functional cells and fill cells. Aspects also include modifying the semiconductor layout by removing one or more fill cells from the macro block to create a gap. Aspects also include examining a set of cells that border edges of the gap to identify one or more predicted rule violations. Based on the identified one or more predicted rule violations, aspects also include modifying the semiconductor layout to change a shape of the gap to avoid the one or more predicted rule violations.

Aspects of the present disclosure address systems and methods for shortening clock-tree wirelength based on target offsets in connected routes. A clock tree comprising routes that interconnect a plurality of clock-tree instances is accessed from memory. A clock-tree instance is selected for evaluation. A baseline power consumption measurement corresponding to a sub-tree of the clock-tree instance with the clock-tree instance at a first size is determined. An alternative power consumption measurement corresponding to the sub-tree of the clock-tree instance with the clock-tree instance at a second size is determined. Based on determining that the baseline power consumption measurement is less than the alternative power consumption measurement, the clock-tree instance is resized according to the second size.

An integrated circuit includes a functional circuit and a first power switch chain. The first power switch chain includes a first power switch circuit and a second power switch circuit and is coupled between a power source and the functional circuit. The first power switch chain is configured to receive a first control signal, and the first control signal is configured to turn on or turn off the first power switch circuit and the second power switch circuit. A first resistance value of the first power switch circuit is different from a second resistance value of the second power switch circuit.

In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

In some embodiments, an initial circuit arrangement is provided. The initial circuit arrangement includes cells that include default-rule lines and non-default-rule lines. Line widths of the default-rule lines are selectively increased for a first cell in the initial circuit arrangement, thereby providing a first modified circuit arrangement. A first maximum capacitance value is calculated for the first cell of the first modified circuit arrangement. A second modified circuit arrangement is provided by selectively increasing line widths of the non-default-rule lines in the first modified circuit arrangement. A second maximum capacitance value is calculated for the first cell of the second modified circuit arrangement. A line width of a first non-default-rule line is selectively reduced based on whether the first maximum capacitance value adheres to a predetermined relationship with the second maximum capacitance value. The second modified circuit arrangement is manufactured on a semiconductor substrate.

An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.

The present disclosure relates to software-defined methods and apparatuses for designing a wafer-level switching system, including: determining wafer-level switching system layout constraints; constructing a target wafer-level switching system and determining parameters, and designing a logical topology of a switching network; designing a layout of the switching chiplets on the wafer substrate; respectively designing interface structures of external chiplets and internal chiplets; configuring a switching mode and an enable state of each port of the switching chiplets; ending the process when the target logical topology can be achieved by the wafer-level switching system; otherwise, reconstructing a logical topology of a switching network and mapping it to the substrate.