Methods, systems, and devices for metadata management for a cache are described. An interface controller may include a first array and a second array that store metadata for a cache memory. The interface controller may receive an activate command associated with a row of the cache memory. In response to the activate command, the interface controller may communicate storage information for the row of the volatile memory from a first array to a first register. The interface controller may receive an access command associated with the row of the cache memory. In response to the access command and based on the storage information in the first register, the interface controller may communicate validity information for the row from a second array to the first register or dirty information for the row from the second array to a second register.

A storage system having an input-output (IO) component, a solid state drive (SSD) with multiple logical units (LUNs), e.g., flash storage units, and a controller coupled to the IO component and the SSD. The controller can cause the storage system to receive an operation request, determine various operational throughputs associated with outstanding commands of the SSD (e.g., read or write commands to be performed by the SSD), determine a time required for the SSD to process the outstanding commands based in part on the operational throughputs, and assign a timeout value to the received operation request. The timeout value may correspond to the time required for the SSD to process the outstanding commands. Any of the operational throughputs may be throttled when a die temperature of any of the SSD's LUNs exceeds an operating temperature threshold, or when an ambient temperature affecting SSD exceeds an ambient temperature threshold.

Data associated with a write request is stored at a storage device of multiple solid-state storage devices. A determination as to whether the data stored at the storage device is readable is made by determining whether a number of subsequent programming operations have been performed since the data was stored at the storage device. A notification that the stored data is readable from the storage device is generated upon determining that the data is readable.

Methods, systems, and devices related to signal development caching in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). In various examples, accessing the memory device may include accessing information from the signal development cache, or the memory array, or both, based on various mappings or operations of the memory device.

Embodiments are directed to providing a secure address translation service. An embodiment of a system includes a memory for storage of data, an Input/Output Memory Management Unit (IOMMU) coupled to the memory via a host-to-device link the IOMMU to perform operations, comprising receiving an address translation request from a remote device via a host-to-device link, wherein the address translation request comprises a virtual address (VA), determining a physical address (PA) associated with the virtual address (VA), generating an encrypted physical address (EPA) using at least the physical address (PA) and a cryptographic key, and sending the encrypted physical address (EPA) to the remote device via the host-to-device link.

An electronic device with embedded access to a high-bandwidth, high-capacity fast-access memory includes (a) a memory circuit fabricated on a first semiconductor die, wherein the memory circuit includes numerous modular memory units, each modular memory unit having (i) a three-dimensional array of storage transistors, and (ii) a group of conductors exposed to a surface of the first semiconductor die, the group of conductors being configured for communicating control, address and data signals associated the memory unit; and (b) a logic circuit fabricated on a second semiconductor die, wherein the logic circuit also includes conductors each exposed at a surface of the second semiconductor die, wherein the first and second semiconductor dies are wafer-bonded, such that the conductors exposed at the surface of the first semiconductor die are each electrically connected to a corresponding one of the conductors exposed to the surface of the second semiconductor die. The three-dimensional array of storage transistors may be formed by NOR memory strings.

A storage device includes: a nonvolatile memory including a plurality of memory regions; and a controller configured to transmit to the host, when a normal read command and a logical address are received from a host, an upload request for uploading map data related to a first memory region corresponding to the logical address among the plurality of memory regions based on a map caching count related to the first memory region.

The present technology relates to a memory device and a method of operating the same. The memory device includes a memory cell array including a plurality of memory cells, a data register connected to the memory cell array through a bit line and configured to store data sensed through the bit line, a cache register configured to cache the data stored in the data register, and a control logic configured to control a caching operation of receiving a cache read command from a memory controller and storing the data, which is stored in the data register, in the cache register, during a cache read period, in response to the cache read command, wherein the control logic controls the caching operation based on whether the cache read command is a first command received after receiving a normal read command from the memory controller.

Anon-volatile memory structure capable of storing weights for layers of a deep neural network (DNN) and perform an inferencing operation within the structure is presented. An in-array multiplication can be performed between multi-bit valued inputs, or activations, for a layer of the DNN and multi-bit valued weights of the layer. Each bit of a weight value is stored in a binary valued memory cell of the memory array and each bit of the input is applied as a binary input to a word line of the array for the multiplication of the input with the weight. To perform a multiply and accumulate operation, the results of the multiplications are accumulated by adders connected to sense amplifiers along the bit lines of the array. The adders can be configured to multiple levels of precision, so that the same structure can accommodate weights and activations of 8-bit, 4-bit, and 2-bit precision.

A data storage device is provided. The data storage device includes a flash memory and a controller. The flash memory stores a firmware that includes a plurality of mode page settings, and each mode page setting includes a plurality of mode parameters. The controller receives a data out message arranged to rewrite a first mode page setting among the plurality of mode page settings from a host. The controller determines whether the data out message will change the mode parameters which cannot be rewritten in the first mode page setting by performing bitwise logic operations on a new mode page setting in the data out message, preset values of the plurality of mode parameters of the first mode page setting, and a rewriteable setting for each bit of the first mode page setting.