The present disclosure provides a shift register, including: an input circuit, electrically connected to a triggering signal line that provides a triggering signal, a first clock signal line that provides a first clock signal, and a first node; configured for controlling whether the triggering signal is outputted to the first node based on the first clock signal; a control circuit, electrically connected to the first node, a second node, the first clock signal line, a second clock signal line that provides a second clock signal, and a turn-on signal line that provides a turn-on signal, configured for controlling whether the turn-on signal is outputted to the second node; and an output circuit, electrically connected to the first node, the second node, a first signal line that provides a first signal, a second signal line that provides a second signal, and a driving signal output line that outputs a driving signal.

The present disclosure provides a shift register, including: an input circuit, electrically connected to a triggering signal line that provides a triggering signal, a first clock signal line that provides a first clock signal, and a first node; configured for controlling whether the triggering signal is outputted to the first node based on the first clock signal; a control circuit, electrically connected to the first node, a second node, the first clock signal line, a second clock signal line that provides a second clock signal, and a turn-on signal line that provides a turn-on signal, configured for controlling whether the turn-on signal is outputted to the second node; and an output circuit, electrically connected to the first node, the second node, a first signal line that provides a first signal, a second signal line that provides a second signal, and a driving signal output line that outputs a driving signal.

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

Embodiments relate to a polishing composition for a magnetic disk substrate, where the polishing composition contains colloidal silica, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound has a weight average molecular weight of 20,000 to 10,000,000 and a concentration of 0.0001 to 2.0% by mass.

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

One embodiment of the present invention sets forth a method for compressing via a pixel shader color information associated with a line of pixels. An intermediary representation of an uncompressed stream of color information is first generated that indicates, for each pixel, whether a previous adjacent pixel shares color information with the pixel. A set of cascading buffers is then generated based on intermediary representation, where each cascading buffer represents a number of unique color codes across different groups of pixels. Finally, a compressed output stream that specifies the unique color codes as well as the number of pixels that share each unique color code is generated based on the set of cascading buffers.