An apparatus comprises a write pole, a waveguide core, and a near-field transducer (NFT) positioned between the write pole and the waveguide core. The NFT comprises a heatsink portion, an enlarged portion, and a peg comprising a refractory metal and extending from the enlarged portion toward a media-facing surface. A first surface of the peg is substantially coplanar with a first surface of the enlarged portion and the first surface of the enlarged portion shares an interface with the heatsink portion. A first dielectric layer is positioned between the peg and the write pole, and a first adhesion layer is positioned between the peg and the first dielectric layer. In addition, a second dielectric layer is disposed on an entire surface of the NFT opposing the media-facing surface, and a second adhesion layer is positioned between the NFT and the second dielectric layer.

An input waveguide is disposed on a substrate-parallel plane and configured to receive light from an input surface. A mode converter joins the input waveguide at a junction away from the input surface. The mode converter converts the light from a fundamental mode to a higher-order mode. An input coupler is proximate to and overlapping the input waveguide parallel to the substrate-parallel plane. The input coupler extending from the input surface to the mode converter and has an asymmetric taper that transitions from a wider crosstrack dimension near the input surface to a narrower crosstrack dimension away from the input surface.

An input waveguide is disposed on a substrate-parallel plane and configured to receive light from an input surface. A mode converter joins the input waveguide at a junction away from the input surface. The mode converter converts the light from a fundamental mode to a higher-order mode. An input coupler is proximate to and overlapping the input waveguide parallel to the substrate-parallel plane. The input coupler extending from the input surface to the mode converter and has an asymmetric taper that transitions from a wider crosstrack dimension near the input surface to a narrower crosstrack dimension away from the input surface.

A recording head includes a waveguide configured to deliver light from a light source to a media-facing surface of the recording head. A near-field transducer is at the media-facing surface the proximate the waveguide. The near-field transducer includes a plasmonic structure with at least two opposing internal surfaces. A dielectric material fills a region between the at least two opposing internal surfaces. A dielectric slit extends between the at least two opposing internal surfaces. The dielectric slit is substantially parallel to the media-facing surface and includes a transparent material with a refractive index different than that of the dielectric material.

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2<T1, resulting in a layer of the template material with thickness T1?T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

A recording head comprises a write pole extending to an air-bearing surface. A near-field transducer is positioned proximate a first side of the write pole in a down-track direction. A heatsink structure is proximate the near-field transducer and positioned between the near-field transducer and the write pole. The heatsink structure extends beyond the near-field transducer in a cross-track direction and extends in a direction normal to the air-bearing surface.

A recording head comprises a write pole extending to an air-bearing surface. A near-field transducer is positioned proximate a first side of the write pole in a down-track direction. A heatsink structure is proximate the near-field transducer and positioned between the near-field transducer and the write pole. The heatsink structure extends beyond the near-field transducer in a cross-track direction and extends in a direction normal to the air-bearing surface.

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.