A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate having a first side and a second side opposite to the first side. The 3D memory device also includes a memory stack including interleaved conductive layers and dielectric layers at the first side of the substrate. The 3D memory device also includes a plurality of channel structures each extending vertically through the memory stack. The 3D memory device also includes a first insulating structure extending vertically through the memory stack and extending laterally to separate the plurality of channel structures into a plurality of blocks. The 3D memory device further includes a first doped region in the substrate and in contact with the first insulating structure. The 3D memory device further includes a first contact extending vertically from the second side of the substrate to be in contact with the first doped region.

A semiconductor device includes a peripheral circuit region comprising a first substrate, circuit elements on the first substrate, a first insulating layer covering the circuit elements, and a contact plug passing through the first insulating layer and disposed to be connected to the first substrate; and a memory cell region comprising a second substrate, gate electrodes on the second substrate and stacked in a vertical direction, and channel structures passing through the gate electrodes, wherein the contact plug comprises a metal silicide layer disposed to contact the first substrate and having a first thickness, a first metal nitride layer on the metal silicide layer to contact the metal silicide layer and having a second thickness, greater than the first thickness, a second metal nitride layer on the first metal nitride layer, and a conductive layer on the second metal nitride layer.

Technologies for allocating resources of managed nodes to workloads to balance multiple resource allocation objectives include an orchestrator server to receive resource allocation objective data indicative of multiple resource allocation objectives to be satisfied. The orchestrator server is additionally to determine an initial assignment of a set of workloads among the managed nodes and receive telemetry data from the managed nodes. The orchestrator server is further to determine, as a function of the telemetry data and the resource allocation objective data, an adjustment to the assignment of the workloads to increase an achievement of at least one of the resource allocation objectives without decreasing an achievement of another of the resource allocation objectives, and apply the adjustments to the assignments of the workloads among the managed nodes as the workloads are performed. Other embodiments are also described and claimed.

Technologies for allocating resources of managed nodes to workloads to balance multiple resource allocation objectives include an orchestrator server to receive resource allocation objective data indicative of multiple resource allocation objectives to be satisfied. The orchestrator server is additionally to determine an initial assignment of a set of workloads among the managed nodes and receive telemetry data from the managed nodes. The orchestrator server is further to determine, as a function of the telemetry data and the resource allocation objective data, an adjustment to the assignment of the workloads to increase an achievement of at least one of the resource allocation objectives without decreasing an achievement of another of the resource allocation objectives, and apply the adjustments to the assignments of the workloads among the managed nodes as the workloads are performed. Other embodiments are also described and claimed.

In one embodiment, a semiconductor storage device includes a plurality of memory chips, at least one of the memory chips including a first controller configured to be shifted to a wait state of generating a peak current, before generating the peak current in accordance with a command. The device further includes a control chip including a second controller configured to search a state of the first controller and control, based on a result of searching the state of the first controller, whether or not to issue a cancel instruction for the wait state to the first controller that has been shifted to the wait state.

Systems, methods, and apparatus including multi-direction conductive lines and staircase contacts for semiconductor devices. One memory device includes an array of vertically stacked memory cells, the array including: a vertical stack of horizontally oriented conductive lines, each conductive line comprising: a first portion extending in a first horizontal direction; and a second portion extending in a second horizontal direction at an angle to the first horizontal direction.

Memory devices might include an array of memory cells, a plurality of access lines, and a heater. The array of memory cells might include a plurality of strings of series-connected memory cells. Each access line of the plurality of access lines might be connected to a control gate of a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells. The heater might be adjacent to an end of each access line of the plurality of access lines.

Provided herein is a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor memory device includes a contact pattern including a vertical contact part, and a sidewall contact part extending from the vertical contact part in a direction crossing the vertical contact part, a lower conductive pattern having a hole into which the vertical contact part is inserted, and an upper conductive pattern overlapping a portion of the lower conductive pattern. The upper conductive pattern includes a first side portion in contact with the sidewall contact part, and a second side portion facing the vertical contact part and spaced apart from the vertical contact part.

A data processing system includes a compute blade generating a write command to store data and a read command to read the data, and a memory blade. The compute blade has a memory that stores information about performance characteristics of each of a plurality of memories, and determines priority information through which eviction of a cache line is carried out based on the stored information.