A semiconductor memory instance is provided that includes an array of memory cells. The array includes a plurality of semiconductor memory cells arranged in at least one column and at least one row. Each of the semiconductor memory cells includes a floating body region configured to be charged to a level indicative of a state of the memory cell. Further includes are a plurality of buried well regions, wherein each of the buried well regions can be individually selected, and a decoder circuit to select at least one of the buried well regions.

A memory cell includes a ferroelectric (FE) material contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line. The OS layer comprises: a first region adjacent the FE material, the first region having a first concentration of a semiconductor element; a second region adjacent the source line, the second region having a second concentration of the semiconductor element; and a third region between the first region and the second region, the third region having a third concentration of the semiconductor element, the third concentration is greater than the second concentration and less than the first concentration.

A computing system for supporting a plurality of different types of memory devices includes a memory voltage regulator. The memory voltage regulator adjusts a supply voltage to a requisite voltage for a detected memory device based on serial presence detect (SPD) data. The computing system further includes a memory controller that supports a plurality of types of memory devices. The memory controller receives data regarding the type of the detected memory device, and controls input/output signals relative to the type of the detected memory device based on the SPD data and the GPIO data of the detected memory device.

A programmable logic array (PLA) is disclosed employing programming logic tile (PLT), System On Chip (SOC) interface bus, Input Output (IO) blocks and Logic Processing Blocks (LPB). SOC processors using SOC interface bus program PLT successively using different configuration memory bank values to realize a logic not limited by the PLT resource counts. Configuration memory blocks comprising of multiple configuration memory banks and configuration programming control logic remove logic processing penalty due to configuration delays. PLT comprises of Programmable Logic Cells (PLC), Programmable Logic Interface (PLY), Embedded Array Blocks (EAB) and configuration memory block. PLA comprises of PLT, IO blocks, SOC interface bus and LPB. PLA accelerates user functionality in as SOC. IO blocks are used to stream data from other SOC components. LPB use PLT to accelerate user specific functionality.

A programmable logic array (PLA) is disclosed employing programming logic tile (PLT), System On Chip (SOC) interface bus, Input Output (IO) blocks and Logic Processing Blocks (LPB). SOC processors using SOC interface bus program PLT successively using different configuration memory bank values to realize a logic not limited by the PLT resource counts. Configuration memory blocks comprising of multiple configuration memory banks and configuration programming control logic remove logic processing penalty due to configuration delays. PLT comprises of Programmable Logic Cells (PLC), Programmable Logic Interface (PLY), Embedded Array Blocks (EAB) and configuration memory block. PLA comprises of PLT, IO blocks, SOC interface bus and LPB. PLA accelerates user functionality in as SOC. IO blocks are used to stream data from other SOC components. LPB use PLT to accelerate user specific functionality.

A semiconductor memory device with a three-dimensional (3D) structure may include: a cell region arranged over a substrate, including a cell structure; a peripheral circuit region arranged between the substrate and the cell region; an upper wiring structure arranged over the cell region; main channel films and dummy channel films formed through the cell structure. The dummy channel films are suitable for electrically coupling the upper wiring structure.

A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. Each memory device supports an access mode and a low-power mode, the latter used to save power for devices that are not immediately needed. The module provides granular power management using a chip-select decoder that decodes chip-select signals from the memory controller into power-state signals that determine which of the memory devices are in which of the modes. Devices can thus be brought out of the low-power mode in relatively small numbers, as needed, to limit power consumption.

A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.

A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.

Methods, apparatus, systems and articles of manufacture are disclosed facilitate read-modify-write support in a coherent victim cache with parallel data paths. An example apparatus includes a random-access memory configured to be coupled to a central processing unit via a first interface and a second interface, the random-access memory configured to obtain a read request indicating a first address to read via a snoop interface, an address encoder coupled to the random-access memory, the address encoder to, when the random-access memory indicates a hit of the read request, generate a second address corresponding to a victim cache based on the first address, and a multiplexer coupled to the victim cache to transmit a response including data obtained from the second address of the victim cache.