The present disclosure describes a power supply switch that includes a voltage generator, a switch circuit, and a confirmation circuit. The voltage generator is configured to compare a first power supply voltage to a second power supply voltage and to output the first power supply voltage or the second power supply voltage as a bulk voltage (V.sub.bulk). The switch circuit includes one or more transistors and is configured to (i) bias bulk terminals of the one or more transistors with the V.sub.bulk and (ii) output either the first power supply voltage or the second power supply voltage as a voltage output signal. The confirmation circuit is configured to output a confirmation signal that indicates whether the voltage output signal transitioned from the first power supply voltage to the second power supply voltage.

Provided is a semiconductor package. The semiconductor package comprises a semiconductor chip on a substrate, a voltage measurement circuit configured to measure an external voltage to be input into the semiconductor chip and a thermoelectric module configured to convert heat released from the semiconductor chip into an auxiliary power, and configured to apply the auxiliary power to the semiconductor chip, the thermoelectric module being separated from the voltage measurement circuit, wherein the voltage measurement circuit is configured to control the thermoelectric module to apply the auxiliary power to the semiconductor chip in response to a change in the external voltage.

A data processing apparatus 2 includes a plurality of power domains controlled by respective power control signals PCS. Power control circuitry 22 includes mapping circuitry which maps a plurality of power status signals PSS indicative of the power status of respective power domains, and received from those power domains, to form the power control signals which are then supplied power domains. The mapping circuitry may be controlled by mapping parameters stored within a memory mapped array. The mapping parameters may specify that a given power control signal is either sensitive or insensitive to the power status of a particular other power domain within the data processing apparatus 2. The mapping parameters may be fixed or software programmable.

A static random access memory (SRAM) includes an array of storage cells and a first sense amplifier. The array of storage cells is arranged as rows and columns. The rows correspond to word lines and the columns correspond to bit lines. The first sense amplifier includes a first transistor and a second transistor. The first sense amplifier is configured to provide a first read of a first storage cell of the array of storage cells. Based on the first read of the first storage cell failing to correctly read data stored in the first storage cell, the first sense amplifier is configured to increment a body bias of the first transistor a first time. In response to the body bias of the first transistor being incremented, the first sense amplifier is configured to provide a second read of the first storage cell.

A static random access memory (SRAM) includes an array of storage cells and a first sense amplifier. The array of storage cells is arranged as rows and columns. The rows correspond to word lines and the columns correspond to bit lines. The first sense amplifier includes a first transistor and a second transistor. The first sense amplifier is configured to provide a first read of a first storage cell of the array of storage cells. Based on the first read of the first storage cell failing to correctly read data stored in the first storage cell, the first sense amplifier is configured to increment a body bias of the first transistor a first time. In response to the body bias of the first transistor being incremented, the first sense amplifier is configured to provide a second read of the first storage cell.

A voltage selection circuit, including: first and second nodes of application of first and second input voltages; a third output voltage supply node; first and second MOS transistors respectively coupling the first and third nodes and the second and third nodes; and a control circuit capable of keeping the first and second transistors either respectively on and off or respectively off and on, the control circuit including a feedback loop from the third node to the gate of the first transistor and being capable, during a transition phase, of controlling the first transistor in linear operating region to apply a DC voltage ramp to the third node.

An apparatus and a method for range extension for a combined data and power line are provided. Further, a bus system is provided. The design is based on a supply voltage that is transmitted via the combined data and power line being refreshed by a charge pump. Further, there may be provision, by way of example, for a data signal that is transmitted via the combined data and power line to be re-freshed using the likewise transmitted supply voltage.

A semiconductor device and a power-off method of the semiconductor device, the semiconductor device including a first power source group including first and second power sources, a second power source group including a third power source and a power sequence controller. The power sequence controller performs power-on operations and power-off operations of the first to third power sources. The power sequence controller starts a power-off operation of the first power source group at a first time, and starts a power-off operation of the second power source group when the power voltage of the first power source group becomes a first voltage or when a first reference time has passed from the first time.

Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.

1. The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.