A semiconductor device includes a memory mat having: a plurality of memory cells; a sense amplifier connected to a memory cell selected from the plurality of memory cells; a first power supply wiring; a first switch connected between the sense amplifier and the first power supply wiring and made an ON state in operating the sense amplifier; and a second switch connected to the sense amplifier and made an ON state in operating the sense amplifier, a second power supply wiring arranged outside the memory mat and connected to the first power supply wiring, a third power supply wiring arranged outside the memory mat and connected to the sense amplifier via the second switch, and a short switch arranged outside the memory mat and connected between the second and third power supply wirings. Here, in operating the sense amplifier, the short switch is made an ON state.

One or more sampling parameters of an application associated with a downstream voltage regulator may be determined. A power supply rejection ratio (“PSRR”) and a switching frequency of an upstream voltage regulator may be dynamically adjusted based on the sampling parameters of the application associated with the downstream voltage regulator. The sampling parameters may include a noise level and a workload of the selected application.

The present invention provides a power control circuit and control method. The power control circuit includes: a control module configured to control, according to an activation command, a memory bank of a plurality of memory banks to perform an operation; a power management module configured to wake up a local power supply for the memory bank according to a clock enable signal; and a power control module communicatively coupled with the power management module and configured to: send the clock enable signal to the power management module of the memory bank corresponding to the activation command in a power-saving mode; and send the clock enable signal to power management modules of the plurality of memory banks in a non-power-saving mode, where the power-saving mode indicates that a system clock is in a low-frequency state.

A system detects a powerdown event, such as a power loss event, and performs a flush of volatile memory to persistent memory during a powerdown sequence. The system includes an energy backup device to power the system during the powerdown sequence. The system is configurable with optional settings that configure the powerdown sequence specific to a type of the energy backup device.

Methods, systems, and devices for memory device operation are described. A memory device may operate in different modes in response to various conditions and user constraints. Such modes may include a power-saving or low power mode. While in the low power mode, the memory device may refrain from operations, such as self-refresh operations, on one or more of the memory array(s) included in the memory device. The memory device may deactivate external interface components and components that may generate operating voltages for the memory array(s), while the memory device may continue to power circuits that store operating information for the memory device. The memory device may employ similar techniques in other operating modes to accommodate or react to different conditions or user constraints.

Methods, systems, and devices for memory device operation are described. A memory device may operate in different modes in response to various conditions and user constraints. Such modes may include a power-saving or low power mode. While in the low power mode, the memory device may refrain from operations, such as self-refresh operations, on one or more of the memory array(s) included in the memory device. The memory device may deactivate external interface components and components that may generate operating voltages for the memory array(s), while the memory device may continue to power circuits that store operating information for the memory device. The memory device may employ similar techniques in other operating modes to accommodate or react to different conditions or user constraints.

A memory system and a memory controller are disclosed. By determining whether an error has occurred in target data stored in a predetermined target memory area of the memory device and determining, in response to whether an error has occurred in the target data, the magnitude of the supplied power based on a first operation parameter selected among predetermined candidate operation parameters in connection with the magnitude of the supplied power, the memory controller may stably drive a firmware, and may handle an operation error of the firmware due to a change in external environment.

In an example, a multiplexer is provided. The multiplexer may include one or more first strings controlling access to source-lines of the memory, wherein a first string of the one or more first strings includes a first set of two high voltage transistors and a first plurality of low voltage transistors. The multiplexer may include one or more second strings controlling access to bit-lines of the memory, wherein a second string of the one or more second strings includes a second set of two high voltage transistors and a second plurality of low voltage transistors. A method for operating such multiplexer is provided.

The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.

A memory device can include a nonvolatile memory (NVM) cell array, data path circuits, coupled between the NVM cell array and an output of the device, that are configured to enable access to the NVM cell array via a plurality of bit lines. A first charge pump can generate a first voltage supply. A second charge pump can generate a second voltage supply. Switch circuits are configured to, in a first mode, couple the first voltage supply to data path circuits, and in a second mode, couple the second voltage supply to the data path circuits. The first charge pump, the second charge pump, the switch circuits, the data path circuits and the NVM cell array are formed with the same integrated circuit substrate. Corresponding methods and systems are also disclosed.