Managing a temperature of a memory element of an information handling system, the method comprising: identifying a lower temperature boundary of the memory element; determining an initial temperature of the memory element; determining whether the initial temperature is less than the lower temperature boundary; in response to determining that the initial temperature is less than the lower temperature boundary: performing a series of repeated burst refresh operations at the memory element; after performing the series of repeated burst refreshes operations, determining an updated temperature of memory element; determining whether the updated temperature is less than the lower temperature boundary; and in response to determining that the updated temperature is greater than the lower temperature boundary, performing a normal boot of the memory element.

The operation speed of a semiconductor device is improved. The semiconductor device includes a first memory region and a second memory region; in the semiconductor device, a first memory cell in the first memory region is superior to a second memory cell in the second memory region in data retention characteristics such as a large storage capacitance or a large channel length-channel width ratio (L/W) of a transistor. When the semiconductor device is used as a cache memory or a main memory device of a processor, the first memory region mainly stores a start-up routine and is not used as a work region for arithmetic operation, and the second memory region is used as a work region for arithmetic operation. The first memory region becomes an accessible region when the processor is booted, and the first memory region becomes an inaccessible region when the processor is in normal operation.

A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

Various embodiments provide for active suppression circuitry. The active suppression circuitry can be used with a circuit for a memory system, such as a dual data rate (DDR) memory system. For example, some embodiments provide an active suppression integrated circuit. The active suppression integrated circuit can be used by a memory system to efficiently suppress power supply noise caused by resonance of a power delivery network (PDN) of the memory system, thereby improving power integrity of the memory system input/output.

Various embodiments provide for active suppression circuitry. The active suppression circuitry can be used with a circuit for a memory system, such as a dual data rate (DDR) memory system. For example, some embodiments provide an active suppression integrated circuit. The active suppression integrated circuit can be used by a memory system to efficiently suppress power supply noise caused by resonance of a power delivery network (PDN) of the memory system, thereby improving power integrity of the memory system input/output.

Disclosed are a non-volatile memory device, a memory system including the same and a read method of the memory system, in which the non-volatile memory device includes a first storage in which a basic offset level for a read retry operation is stored, a second storage in which an additional offset level for the read retry operation is stored, and a voltage generator suitable for adjusting, when the read retry operation is performed, a read voltage by using the basic offset level and further by selectively using the additional offset level depending on a read operation.

A physically unclonable function (PUF) includes a bit cell that includes a latch and a switch to selectively couple the latch to a supply voltage node. A first transmission gate couples a first bit line to a first internal node of the latch and a second transmission gate couples a second bit line to a second internal node of the latch. A digital to analog converter (DAC) circuit is selectively coupled to the first internal node through the first bit line and the first transmission gate and to the second internal node through the second bit line and the second transmission gate, to thereby precharge the latch before the first bit cell is read. The latch regenerates responsive to the switch being closed to connect the latch to the supply voltage node. The first and second bit lines are used to read the regenerated value of the latch.

Disclosed herein are related to an integrated circuit including a semiconductor layer. In one aspect, the semiconductor layer includes a first region, a second region, and a third region. The first region may include a circuit array, and the second region may include a set of interface circuits to operate the circuit array. A side of the first region may face a first side of the second region along a first direction. The third region may include a set of header circuits to provide power to the set of interface circuits through metal rails extending along a second direction. A side of the third region may face a second side of the second region along the second direction. In one aspect, the first side extending along the second direction is shorter than the second side extending along the first direction, and the metal rails are shorter than the first side.

Disclosed herein are related to an integrated circuit including a semiconductor layer. In one aspect, the semiconductor layer includes a first region, a second region, and a third region. The first region may include a circuit array, and the second region may include a set of interface circuits to operate the circuit array. A side of the first region may face a first side of the second region along a first direction. The third region may include a set of header circuits to provide power to the set of interface circuits through metal rails extending along a second direction. A side of the third region may face a second side of the second region along the second direction. In one aspect, the first side extending along the second direction is shorter than the second side extending along the first direction, and the metal rails are shorter than the first side.