A system includes a data storage medium and a shockwave generator. The data storage medium includes cells and a plurality of layers. Each cell is configured to store information therein. At least two cells are arranged in a horizontal plane within a same layer of the plurality of layers of the data storage medium and at least two cells are arranged in a vertical plane in different layers of the plurality of layers of the data storage medium. The shockwave generator is configured to generate a shockwave signal that travels through a layer of the plurality of layers of the data storage medium. A target cell within the layer stores information responsive to a beam emitted from an emitter targeting the target cell as the shockwave signal is passing through the target cell. The target cell maintains the information after the shockwave signal exits through the target cell.

A system includes a data storage medium and a shockwave generator. The data storage medium includes cells and a plurality of layers. Each cell is configured to store information therein. At least two cells are arranged in a horizontal plane within a same layer of the plurality of layers of the data storage medium and at least two cells are arranged in a vertical plane in different layers of the plurality of layers of the data storage medium. The shockwave generator is configured to generate a shockwave signal that travels through a layer of the plurality of layers of the data storage medium. A target cell within the layer stores information responsive to a beam emitted from an emitter targeting the target cell as the shockwave signal is passing through the target cell. The target cell maintains the information after the shockwave signal exits through the target cell.

The system includes a data storage medium comprising cells, an excitation circuit, and an emitter. The cells arranged in a three dimensional space. The excitation circuit excites each cell independently. Exciting a cell changes an optical property of the cell. The emitter emits a first beam onto a first cell during a first excitation period to orient electrical charges within the first cell to a first oriented value and intensity of electric field to a first intensity value. The emitter emits a second beam onto a second cell during a second excitation period to orient electrical charges within the second cell to a second oriented value and intensity of electric field to a second intensity value. The first and second cells maintain the first and the second oriented values and the first and second intensity values after the first and second excitation periods are over, respectively.

A switch activated by a single control photon for routing a single target photon from either of two switch inputs to either of two switch outputs. The device is based on a single quantum emitter, such as an atom, coupled to a fiber-coupled, chip-based optical micro-resonator. A single reflected control photon toggles the switch from high reflection to high transmission mode, with no additional control fields required. The control and target photons are both in-fiber and practically identical, for compatibility with scalable architectures for quantum information processing.

The present disclosure provides systems and methods for storing, reading, and writing data using particle-based acoustic wave driven shift registers. The shift registers may physically shift particles along rows and/or columns of wells through the interactions of two parallel surfaces. A transducer may generate an acoustic wave to displace one or more of the two parallel surfaces. The particles may be transferred to and/or otherwise constrained by a buffer surface during at least a portion of the acoustic wave, such that the particles may be shifted during one or more cycles of the acoustic wave. In various embodiments, the amplitude of the acoustic wave may correspond to the spacing distance between each of the wells. The wells may be physical and/or potential wells.

An ultrafast non-volatile memory cell for wafer-scale integration includes a voltage divider that outputs an output voltage. The voltage divider includes a reference resistive device that is a reference magnetic tunnel junction or another reference resistive component and a switchable magnetic tunnel junction that includes a free magnet and a fixed magnet. The switchable magnetic tunnel junction configured such that the free magnet is light switchable between a high impedance state and a low impedance state upon application of an electric signal and incident light. A transistor switch is configured to activate the voltage divider for memory write and read operations. A light modulator is in electrical communication with the output voltage from the voltage divider. The light modulator is configured to modulate a guided light beam for memory read operations. Arrays of the memory cells are also provided.

The present disclosure provides systems and methods for storing, reading, and writing data using particle-based acoustic wave driven shift registers. The shift registers may physically shift particles along rows and/or columns of wells through the interactions of two parallel surfaces. A transducer may generate an acoustic wave to displace one or more of the two parallel surfaces. The particles may be transferred to and/or otherwise constrained by a buffer surface during at least a portion of the acoustic wave, such that the particles may be shifted during one or more cycles of the acoustic wave. In various embodiments, the amplitude of the acoustic wave may correspond to the spacing distance between each of the wells. The wells may be physical and/or potential wells.

The present invention relates to a storage device (300, 400) and to a method of controlling a storage device (300, 400). A storage device (300, 400) according to the invention comprises a plurality of information storage units (101, 201, 302), each comprising an optically transmissive memory element (104, 306), an optically transmissive light-receiving device (102, 304), and an optically transmissive control unit (103, 305) connected to the memory element (104, 306) and the light-receiving device (102, 304). The components are optically transmissive such that a request for information data stored on the optically transmissive memory element (104, 306) may be received from any direction. Thereby, an optical signal (316, 309, 422) comprising a request for information may be received by several light-receiving devices (102, 304) simultaneously enabling a fast retrieval of information data stored on a storage device (300, 400) comprising several information storage units (101, 201, 302).

The present disclosure provides serial-gate transistors and nonvolatile memory devices including serial-gate transistors. In some embodiments, a nonvolatile memory device includes a plurality of memory blocks, a plurality of pass transistor blocks, and a plurality of gates sequentially arranged in a horizontal direction in a gate region above a semiconductor substrate. Each of the plurality of pass transistor blocks includes a plurality of serial-gate transistors configured to transfer a plurality of driving signals to a corresponding memory block of the plurality of memory blocks. Each of the plurality of serial-gate transistors includes a first source-drain region, a gate region, and a second source-drain region that are sequentially arranged in a horizontal direction at a semiconductor substrate. The plurality of gates are electrically decoupled from each other. A plurality of block selection signals respectively applied to the plurality of gates are controlled independently of each other.

The present disclosure provides serial-gate transistors and nonvolatile memory devices including serial-gate transistors. In some embodiments, a nonvolatile memory device includes a plurality of memory blocks, a plurality of pass transistor blocks, and a plurality of gates sequentially arranged in a horizontal direction in a gate region above a semiconductor substrate. Each of the plurality of pass transistor blocks includes a plurality of serial-gate transistors configured to transfer a plurality of driving signals to a corresponding memory block of the plurality of memory blocks. Each of the plurality of serial-gate transistors includes a first source-drain region, a gate region, and a second source-drain region that are sequentially arranged in a horizontal direction at a semiconductor substrate. The plurality of gates are electrically decoupled from each other. A plurality of block selection signals respectively applied to the plurality of gates are controlled independently of each other.