A device includes a comparator to provide an indication of a difference between Vp on a first terminal coupled to a top plate of each of a first group of differential capacitors, and Vn on a second terminal coupled to a top plate of each of a second group of differential capacitors. The device includes a control circuit coupled to the comparator. The control circuit is to receive a first indication of a difference between Vp and Vn; responsive to the first indication, cause a first driver to provide a reference voltage to bottom plates of one of the first and second groups, and cause a second driver to provide a ground voltage to bottom plates of the other of the first and second groups; receive a second indication of a difference between Vp and Vn; and provide a digital value responsive to the first indication and the second indication.

A device includes a comparator to provide an indication of a difference between Vp on a first terminal coupled to a top plate of each of a first group of differential capacitors, and Vn on a second terminal coupled to a top plate of each of a second group of differential capacitors. The device includes a control circuit coupled to the comparator. The control circuit is to receive a first indication of a difference between Vp and Vn; responsive to the first indication, cause a first driver to provide a reference voltage to bottom plates of one of the first and second groups, and cause a second driver to provide a ground voltage to bottom plates of the other of the first and second groups; receive a second indication of a difference between Vp and Vn; and provide a digital value responsive to the first indication and the second indication.

A non-volatile memory device includes a plurality of memory cells arranged in a matrix, a plurality of word lines extended in a row direction, and a plurality of bit lines extended in a column direction. Each of the memory cells is coupled to one of the word lines and one of the bit lines. The memory device further includes a word-line control circuit coupled to and configured to control the word lines, a first bit-line control circuit configured to control the bit lines and sense the memory cells in a digital mode, and a second bit-line control circuit configured to bias the bit lines and sense the memory cells in an analog mode. The first bit-line control circuit is coupled to a first end of each of the bit lines. The second bit-line control circuit is coupled to a second end of each of the bit lines.

An in-memory computing device includes in some examples a two-dimensional array of memory cells arranged in rows and columns, each memory cell made of a nine-transistor current-based SRAM. Each memory cell includes a six-transistor SRAM cell and a current source coupled by a switching transistor, which is controlled by input signals on an input line, to an output line associates with the column of memory cells the memory cell is in. The current source includes a switching transistor controlled by the state of the six-transistor SRAM cell, and a current regulating transistor adapted to generate a current at a level determined by a control signal applied at the gate. The control signal can be set such that the total current in each output line is increased by a factor of 2 in each successive column of the memory cells.

An apparatus includes an in-memory compute circuit that includes a memory circuit configured to generate a set of products by combining received input values with respective weight values stored in rows of the memory circuit, and to combine the set of products to generate an accumulated output value. The in-memory compute circuit may further include a control circuit and a plurality of routing circuits, including a first routing circuit coupled to a first set of rows of the memory circuit. The control circuit may be configured to cause the first routing circuit to route groups of input values to different ones of the first set of rows over a plurality of clock cycles, and the memory circuit to generate, on a clock cycle following the plurality of clock cycles, a particular accumulated output value that is computed based on the routed groups of input values.

A data storage device includes a hard disk drive coupled to a printed circuit board (PCB), a volatile memory device coupled to the PCB, a non-volatile memory device coupled to the PCB, and a controller coupled to the PCB, such that the controller is in communication with the hard disk drive, the volatile memory device, and the non-volatile memory device. The controller is configured to identify patterns and/or structures of metadata for the hard disk drive, perform one or more of the following to the metadata to tailor the metadata: data shaping, content aware decoding, adaptive data trimming, and/or adaptive metablock sizing, and write the tailored metadata to the non-volatile memory device. The metadata is at least one of repeatable run out metadata, positioning error signal metadata, adjacent track interference metadata, and/or emergency power off metadata.

A neuromorphic device includes a plurality of cell tiles including a cell array including a plurality of memory cells storing a weight of a neural network, a row driver connected to the plurality of memory cells, and cell analog-digital converters connected to the plurality of memory cells and converting cell currents into a plurality of pieces of digital cell data, a reference tile including a plurality of reference cells, a reference row driver connected to the plurality of reference cells, and reference analog-digital converters connected to the plurality of reference cells and converting reference currents read via the plurality of reference column lines into a plurality of pieces of digital reference data, and a comparator circuit configured to compare the plurality of pieces of digital cell data with the plurality of pieces of digital reference data, respectively.

Technologies relating to analog-to-analog quantizers with an intrinsic Rectified Linear Unit (ReLU) function designed for in-memory computing are disclosed. An apparatus, in some implementations, includes: a DAC; a first crossbar connected to the DAC; a first analog quantizer connected to the first crossbar; a buffer connected to the first analog quantizer; a second crossbar connected to the buffer; and an ADC connected to the second crossbar.

Various embodiments provide apparatuses, systems, and methods for multibit analog representation, e.g., for in-memory computing. Embodiments may include a single-ended or differential ladder network to generate an analog value (e.g., a voltage or charge) based on a set of bits from a memory array. The ladder network may include a plurality of branches coupled to an output line, wherein individual branches include a capacitor with a first terminal coupled to the output line and a switch coupled to a second terminal of the capacitor. The switch may be controlled by a respective bit of the set of bits to selectively couple the second terminal of the capacitor to a first voltage node or a second voltage node based on a value of the respective bit. Other embodiments may be described and claimed.

A photoelectric conversion device including a plurality of substrates in a stacked state, the plurality of substrates including a first substrate and a second substrate electrically connected to each other, the photoelectric conversion device comprising: a memory cell unit including row-selection lines that are to be driven upon selection of a row of a memory cell array and column-selection lines that are to be driven upon selection of a column of the memory cell array; and a memory peripheral circuit unit that includes row-selection line connection portions and column-selection line connection portions so as to drive the row-selection lines and to drive the column-selection lines, wherein a first portion that is at least a part of the memory peripheral circuit unit is formed on the first substrate and the memory cell unit is formed on the second substrate.