Examples herein relate to devices that include a strobe tree circuit for capturing data using a memory-sourced strobe. In an example, a device includes a data capture path including first and second flip-flops, and a strobe tree including a comparator and first and second multiplexers. The comparator is configured to output complementary signals on first and second output nodes. First and second selection input nodes of the first multiplexer are connected to the first and second output nodes of the comparator, respectively. First and second selection input nodes of the second multiplexer are connected to the second and first output nodes of the comparator, respectively. The read strobe tree is configured to provide first and second signals output from the first and second multiplexers to first and second nodes, respectively. Clock input nodes of the first and second flip-flops are connected to the first and second nodes, respectively.

A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region.

A static random access memory device includes a memory matrix provided with at least one set of SRAM memory cells and a circuit for initializing cells of the set, the setting circuit being able to carry out various setting types and in particular a “deterministic” setting in which the cells are established at an imposed value and to carry out a “free” setting in which the cells are established at a value that depends on their manufacturing method.

A memory includes first and second lines. A cell-array comprises memory cells located to intersection regions between the first and second lines. A controller applies a voltage to the memory cells via the first and second lines. The cell-array comprises a first area used for reading or writing of data in a normal operation, and a second area storing predetermined data used for adjustment of the controller. The controller writes first logical data into the first area by applying a first voltage thereto and writes second logical data by applying a second voltage smaller than the first voltage, in the normal operation. The controller applies a third voltage to both first cells storing the first logical data and second cells storing the second logical data in the second area and then reads the predetermined data, after power-on and before starting the normal operation.

An example method for managing a memory device includes a non-volatile memory. The example method further includes providing a first time-stamp to the memory device, wherein the first time-stamp is a power-down time-stamp of the memory device, storing the first time-stamp, associating the first time-stamp with at least one region of the non-volatile memory, providing a second time-stamp to the memory device, wherein the second time-stamp is a subsequent power-up time-stamp of the memory device, associating the second time-stamp with the at least one region of the non-volatile memory, determining a difference time between the first time-stamp and the second time-stamp, and, based on the difference time, performing a refresh operation of the at least one region of the non-volatile memory. Further, a related memory device is disclosed, as well as a method for measuring the off-time of a memory device.

A system includes: a processor; a register configured to store a plurality of words, non-volatile memory having a plurality of cells, each cell corresponding to one of the words of the register, and wherein the each cell of the plurality of cells are set to an initial reset value; a first controller that in response to a loss in power: determines the word stored by the register; and changes the initial reset value of the cell of the non-volatile memory corresponding to the determined word stored by the register to a set value; a second controller that in response to detecting a restoration in power: identifies the cell having the set value; writes the word corresponding to the identified cell to the register; and resets the cells of the non-volatile memory to the initial reset value.

A system includes: a processor; a register configured to store a plurality of words, non-volatile memory having a plurality of cells, each cell corresponding to one of the words of the register, and wherein the each cell of the plurality of cells are set to an initial reset value; a first controller that in response to a loss in power: determines the word stored by the register; and changes the initial reset value of the cell of the non-volatile memory corresponding to the determined word stored by the register to a set value; a second controller that in response to detecting a restoration in power: identifies the cell having the set value; writes the word corresponding to the identified cell to the register; and resets the cells of the non-volatile memory to the initial reset value.

A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

Methods, systems, and devices for reset verification in a memory system are described. In some examples, a memory device may perform a reset operation and set a mode register to a first value based on performing the reset operation. The first value may be associated with a successful execution of the reset command. The memory device may transmit an indication to a host device based on determining the first value. The host device may determine from the received indication or from the first value stored in the mode register that the first value is associated with the successful execution of the reset command. Thus, the memory device, or the host device, or both may be configured to verify whether the reset operation is successful.