A memory system includes a memory device configured to store data, and a memory controller configured to perform communication between a host and the memory device and to control the memory device such that, during an operation of programming sequential data, a hash value is generated from logical block addresses of a memory area, to which the sequential data is to be written, and the hash value is stored and such that, during an operation of reading the sequential data, the sequential data is read from the memory area based on the hash value.

A memory system includes a memory device configured to store data, and a memory controller configured to perform communication between a host and the memory device and to control the memory device such that, during an operation of programming sequential data, a hash value is generated from logical block addresses of a memory area, to which the sequential data is to be written, and the hash value is stored and such that, during an operation of reading the sequential data, the sequential data is read from the memory area based on the hash value.

The present disclosure includes apparatuses and methods related to shifting data. A number of embodiments of the present disclosure include an apparatus comprising a shift register comprising an initial stage and a final stage. The shift register may be configured such that a clock signal may be initiated at the final stage of the shift register.

The present disclosure includes apparatuses and methods related to shifting data. A number of embodiments of the present disclosure include an apparatus comprising a shift register comprising an initial stage and a final stage. The shift register may be configured such that a clock signal may be initiated at the final stage of the shift register.

Systems and methods are disclosed for reducing or eliminating address lines that need to be routed to multiple related embedded memory blocks. In particular, one or more inputs are added to a block RAM such that when one or more of the inputs are asserted, the address input to the Block RAM may be incremented prior to being used to retrieve data contents of the block RAM. Thus, if address <addr> is provided to the block RAM and the address increment signal is asserted, data may be read from location <addr+N> instead of <addr>, where N may be an integer. Block RAMs with such address arithmetic may be used to implement wide First-In-First-Out (FIFO) queues, wide memories, and/or data-burst accessible block RAMs.

Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

A memory circuit includes a memory array, a word line, and a bit line. The memory array includes a plurality of memories arranged in a matrix shape in a first direction and a second direction perpendicular to the first direction. The word line extends in the first direction and reads signals from the plurality of memories arranged in the first direction. The bit line includes a digit line connected to the plurality of memories arranged in the second direction and an output line connected to the digit line and extending in the first direction and transmits a signal from a memory corresponding to the word line to the output line as the word line reads a signal.

A memory device includes a memory, and a processor coupled to the memory and configured to hold memory information corresponding to the memory, access information corresponding to access to the memory, and storage information indicating a storage area of the access information, extract, based on the storage information, an access information code including the access information, output the memory information in response to a read request from an external, and output the extracted access information code in response to an acknowledgment received from the external corresponding to the memory information.

A memory device includes a memory, and a processor coupled to the memory and configured to hold memory information corresponding to the memory, access information corresponding to access to the memory, and storage information indicating a storage area of the access information, extract, based on the storage information, an access information code including the access information, output the memory information in response to a read request from an external, and output the extracted access information code in response to an acknowledgment received from the external corresponding to the memory information.