In some embodiments, an in-memory-computing SRAM macro based on capacitive-coupling computing (C3) (which is referred to herein as “C3SRAM”) is provided. In some embodiments, a C3SRAM macro can support array-level fully parallel computation, multi-bit outputs, and configurable multi-bit inputs. The macro can include circuits embedded in bitcells and peripherals to perform hardware acceleration for neural networks with binarized weights and activations in some embodiments. In some embodiments, the macro utilizes analog-mixed-signal capacitive-coupling computing to evaluate the main computations of binary neural networks, binary-multiply-and-accumulate operations. Without needing to access the stored weights by individual row, the macro can assert all of its rows simultaneously and form an analog voltage at the read bitline node through capacitive voltage division, in some embodiments. With one analog-to-digital converter (ADC) per column, the macro cab realize fully parallel vector-matrix multiplication in a single cycle in accordance with some embodiments.

A memory device includes a memory cell array and a peripheral circuit. The memory cell array includes a plurality of memory regions each identified by a row address and a column address. The peripheral circuit accesses the memory cell array by performing, based on an address, a burst length and a burst address gap provided from a memory controller, a burst operation supporting a variable burst address gap. The burst address gap is a numerical difference between adjacent column addresses, on which the burst operation is to be performed.

A method of managing memory in an integrated circuit card comprising a non-volatile memory portion and a RAM memory portion, the method comprising creating in a non-volatile memory heap one or more array pointers, corresponding to one or more transient arrays to be allocated, each array pointer comprising a transient array size and a transient array address, wherein the creating comprises creating one or more array pointers comprising as transient array address a logical address of the area of the RAM memory portion in which the respective transient array is to be allocated, and assigning then in the RAM memory area memory only to transient arrays, corresponding to the respective one or more array pointers, which comprise at least a value different from zero.

A method of managing memory in an integrated circuit card comprising a non-volatile memory portion and a RAM memory portion, the method comprising creating in a non-volatile memory heap one or more array pointers, corresponding to one or more transient arrays to be allocated, each array pointer comprising a transient array size and a transient array address, wherein the creating comprises creating one or more array pointers comprising as transient array address a logical address of the area of the RAM memory portion in which the respective transient array is to be allocated, and assigning then in the RAM memory area memory only to transient arrays, corresponding to the respective one or more array pointers, which comprise at least a value different from zero.

The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates an operation code and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on the operation code and the strobe pulse and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys based on a plurality of operation codes and the strobe pulse and prevents the generation of the enable signal for a predetermined time when the plurality of guard keys are not sequentially enabled.

A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates an operation code and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on the operation code and the strobe pulse and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys based on a plurality of operation codes and the strobe pulse and prevents the generation of the enable signal for a predetermined time when the plurality of guard keys are not sequentially enabled.

A system includes a random access memory organized into individually addressable words. Streaming access control circuitry is coupled to word lines of the random access memory. The streaming access control circuitry responds to a request to access a plurality of individually addressable words of a determined region of the random access memory by generating control signals to drive the word lines to streamingly access the plurality of individually addressable words of the determined region. The request indicates an offset associated with the determined region and a pattern associated with the streaming access.

A system includes a random access memory organized into individually addressable words. Streaming access control circuitry is coupled to word lines of the random access memory. The streaming access control circuitry responds to a request to access a plurality of individually addressable words of a determined region of the random access memory by generating control signals to drive the word lines to streamingly access the plurality of individually addressable words of the determined region. The request indicates an offset associated with the determined region and a pattern associated with the streaming access.