A system includes a memory array of sub-blocks, each sub-block including groups of memory cells, and a processing device. The processing device causes a first wordline to be programmed through the sub-blocks with a mask by causing to be programmed, to a first voltage level: a first group of memory cells of a first sub-block; and a second group of memory cells of a second sub-block. The processing device further scans a second wordline that has been programmed and is coupled to the first wordline, scanning includes: causing a custom wordline voltage to be applied to the second wordline, the custom wordline voltage to select groups of memory cells corresponding to those of the first wordline programmed to the first voltage level; concurrently reading data from the selected groups of memory cells of the second wordline; and performing, using the data, an error check of the second wordline.

A system includes a memory array with sub-blocks, each sub-block having groups of memory cells. A processing device, operatively coupled with the memory array, is to perform operations including performing, after a wordline is programmed through the sub-blocks, scanning of the wordline. The scanning includes selecting, to sample first data of the wordline, a first group of the groups of memory cells of a first sub-block of the sub-blocks; selecting, to sample second data of the wordline, a second group of the groups of memory cells of a second sub-block of the sub-blocks; concurrently reading the first data from the first group and the second data from the second group of the groups of memory cells; and performing an error check of the wordline using the first data and the second data.

In some examples, a memory device may perform refresh operations responsive to internal and/or external commands. internal refresh commands may include auto-refresh commands and row hammer (e.g., targeted) refresh commands. External commands may include refresh management commands. In some examples, the external command may cause a refresh operation to occur after a number of activation commands. The memory device may monitor row addresses associated with the activation commands. In some examples, the memory device may skip a refresh operation indicated by a refresh management command if none of the row addresses associated with the activation commands occurs at a high frequency. In some examples, row addresses may be determined to be aggressor row addresses if a received row address matches a previously received row address.

A non-volatile memory of an embodiment includes: a memory cell array including a plurality of memory cell transistors; a plurality of word lines connected to a plurality of gates of the plurality of respective memory cell transistors; a VPGM monitor connected to at least one of the plurality of word lines; and a sequencer. When writing voltage is applied to a selected word line selected from among the plurality of word lines at data writing to the memory cell array, the sequencer detects voltage of the selected word line through the VPGM monitor and determines whether detected voltage obtained through the detection has reached a predetermined value.

An electronic device includes a memory controller selecting map data to be output to a host. The memory controller includes an address counter and a map data selector. The address counter counts a number of times a logical block address corresponding to a request is received based on the request received from the host and outputs an activation signal indicating that an index to which the logical block address belongs is an activation index when an activation count corresponding to the index is equal to or greater than a preset value, the activation count being generated based on a counting result. The map data selector selects map data to be output to the host based on the activation signal. The address counter decreases the activation count by a preset size when a size of the selected map data exceeds a storage capacity of the host allocated for storing map data.

An electronic device includes a memory controller selecting map data to be output to a host. The memory controller includes an address counter and a map data selector. The address counter counts a number of times a logical block address corresponding to a request is received based on the request received from the host and outputs an activation signal indicating that an index to which the logical block address belongs is an activation index when an activation count corresponding to the index is equal to or greater than a preset value, the activation count being generated based on a counting result. The map data selector selects map data to be output to the host based on the activation signal. The address counter decreases the activation count by a preset size when a size of the selected map data exceeds a storage capacity of the host allocated for storing map data.

The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

A monotonic counter stores N binary words representing a value in N memory cells. When i memory cells of consecutive ranks between k modulo N and k+i modulo N each represent a value complementary to a null value, the counter is incremented by erasing a value of a memory cell of rank k+i+1 modulo N. When i+1 memory cells of consecutive ranks between k+1 modulo N and k+i+1 modulo N each represent the value complementary to the null value, the counter is incremented by incrementing a value of a memory cell of rank k modulo N by two step sizes and storing a result in a memory cell of rank k+1 modulo N, wherein, N is an integer greater than or equal to five, k is an integer, and i is an integer between 2 and N−3.

A monotonic counter stores N binary words representing a value in N memory cells. When i memory cells of consecutive ranks between k modulo N and k+i modulo N each represent a value complementary to a null value, the counter is incremented by erasing a value of a memory cell of rank k+i+1 modulo N. When i+1 memory cells of consecutive ranks between k+1 modulo N and k+i+1 modulo N each represent the value complementary to the null value, the counter is incremented by incrementing a value of a memory cell of rank k modulo N by two step sizes and storing a result in a memory cell of rank k+1 modulo N, wherein, N is an integer greater than or equal to five, k is an integer, and i is an integer between 2 and N−3.