Numerous embodiments are disclosed for splitting a physical array into multiple arrays for separate vector-by-matrix multiplication (VMM) operations. In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns; and a plurality of sets of output lines, where each column contains a set of output lines; wherein each row is coupled to only one output line in the set of output lines for each column.

Numerous embodiments are disclosed for splitting a physical array into multiple arrays for separate vector-by-matrix multiplication (VMM) operations. In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns; and a plurality of sets of output lines, where each column contains a set of output lines; wherein each row is coupled to only one output line in the set of output lines for each column.

A circuit includes a plurality of registers, each register including SRAM cells, a read port configured to receive a read address, a write port configured to receive a write address, a selection circuit, a latch circuit, and a decoder coupled in series between the read and write ports and the plurality of registers, and a control circuit. Responsive to a clock signal and read and write enable signals, the control circuit causes the selection circuit, the latch circuit, and the decoder to select a first register of the plurality of registers in a read operation based on the read address, and select a second register of the plurality of registers in a write operation based on the write address.

A circuit includes a plurality of registers, each register including SRAM cells, a read port configured to receive a read address, a write port configured to receive a write address, a selection circuit, a latch circuit, and a decoder coupled in series between the read and write ports and the plurality of registers, and a control circuit. Responsive to a clock signal and read and write enable signals, the control circuit causes the selection circuit, the latch circuit, and the decoder to select a first register of the plurality of registers in a read operation based on the read address, and select a second register of the plurality of registers in a write operation based on the write address.

An integrated circuit includes a plurality of memory cells, a first pair of complementary data lines, and a second pair of complementary data lines. The plurality of memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are different from the first pair of complementary data lines and are coupled to the second array of memory cells. A number of memory cells in the first array of memory cells is different from a number of memory cells in the second array of memory cells.

An integrated circuit includes a plurality of memory cells, a first pair of complementary data lines, and a second pair of complementary data lines. The plurality of memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are different from the first pair of complementary data lines and are coupled to the second array of memory cells. A number of memory cells in the first array of memory cells is different from a number of memory cells in the second array of memory cells.

A data processing system includes a memory configured to receive memory access requests. Each memory access request having a corresponding access address and having a corresponding parity bit for an address value of the corresponding access address. The corresponding access address is received over a plurality of address lines and the parity bit is received over a parity line. The memory includes a memory array having a plurality of memory cells arranged in rows, each row having a corresponding word line of a plurality of word lines, and a row decoder coupled to the plurality of address lines, the parity line, and the plurality of word lines. The row decoder is configured to selectively activate a selected word line of the plurality of word lines based on the corresponding access address and the corresponding parity bit of a received memory access request. The concept can also be used with parity bits on columns of the memory cells and a column decoder that selects bit lines associated with column address lines.

The invention relates to a method for operating a memory assembly. A physical address is received. The physical address is associated with a first memory segment of a memory assembly. The physical address is modified to a modified physical address. The modified physical address is associated with a second memory segment of the memory assembly.

Methods, systems, and media for decoding data are described. A sequence of read-level voltages for decoding operations may be determined based on a trend of decoding success indicators, including a first decoding success indicator and a second decoding success indicator. The first decoding success indicator is obtained from a more recent successful decoding operation. The first one of the sequence may be set to a read-level voltage of the first decoding success indicator. If the read-level voltage of the first decoding success indicator is less than a read-level voltage of the second decoding success indicator, then the trend is decreasing, and the second one of the sequence may be set to a read-level voltage less than that of the first one of the sequence. After executing one or more decoding operations, the decoding success indicators may be updated based on the read-level voltage of the current successful decoding operation.

Methods, systems, and media for decoding data are described. A sequence of read-level voltages for decoding operations may be determined based on a trend of decoding success indicators, including a first decoding success indicator and a second decoding success indicator. The first decoding success indicator is obtained from a more recent successful decoding operation. The first one of the sequence may be set to a read-level voltage of the first decoding success indicator. If the read-level voltage of the first decoding success indicator is less than a read-level voltage of the second decoding success indicator, then the trend is decreasing, and the second one of the sequence may be set to a read-level voltage less than that of the first one of the sequence. After executing one or more decoding operations, the decoding success indicators may be updated based on the read-level voltage of the current successful decoding operation.