Embodiments of the present disclosure relate to a memory system and a method for operating the memory system. According to embodiments of the present disclosure, a memory system may determine a target write data which is to be written to one of a plurality of super memory blocks, and may write the target write data based on a size of the target write data, to a first super memory block which includes at least one bad word line or a second super memory block which includes no bad word line.

Methods, systems, and devices for operating a memory device are described. One method includes caching data of a memory cell at a sense amplifier of a row buffer upon performing a first read of the memory cell; determining to perform at least a second read of the memory cell after performing the first read of the memory cell; and reading the data of the memory cell from the sense amplifier for at least the second read of the memory cell.

Apparatus and method for managing metadata in a data storage device, such as a solid-state drive (SSD). In some embodiments, a non-volatile memory (NVM) includes a population of semiconductor memory dies. The dies are connected a number of parallel channels such that less than all of the semiconductor dies are connected to each channel. A controller circuit apportions the semiconductor memory dies into a plurality of die sets, with each die set configured to store user data blocks associated with a different user. A separate set of map data is generated to describe user data blocks stored to each die set. The controller circuit stores the respective sets of map data in the associated die sets so that no die set stores map data associated with a different die set. The die sets may be arranged in accordance with the NVMe (Non-Volatile Memory Express) specification.

Apparatus and method for managing metadata in a data storage device, such as a solid-state drive (SSD). In some embodiments, a non-volatile memory (NVM) includes a population of semiconductor memory dies. The dies are connected a number of parallel channels such that less than all of the semiconductor dies are connected to each channel. A controller circuit apportions the semiconductor memory dies into a plurality of die sets, with each die set configured to store user data blocks associated with a different user. A separate set of map data is generated to describe user data blocks stored to each die set. The controller circuit stores the respective sets of map data in the associated die sets so that no die set stores map data associated with a different die set. The die sets may be arranged in accordance with the NVMe (Non-Volatile Memory Express) specification.

The present disclosure includes apparatuses and methods for bank to bank data transfer. An example apparatus includes a plurality of banks of memory cells, an internal bus configured to transfer data between the plurality of banks and an external bus interface, and a bank-to-bank transfer bus configured to transfer data between the plurality of banks.

The present disclosure includes apparatuses and methods for bank to bank data transfer. An example apparatus includes a plurality of banks of memory cells, an internal bus configured to transfer data between the plurality of banks and an external bus interface, and a bank-to-bank transfer bus configured to transfer data between the plurality of banks.

Methods, systems, and devices for thin film transistor deck selection in a memory device are described. A memory device may include memory arrays arranged in a stack of decks formed over a substrate, and deck selection components distributed among the layers to leverage common substrate-based circuitry. For example, each memory array of the stack may include a set of digit lines of a corresponding deck, and deck selection circuitry operable to couple the set of digit lines with a column decoder that is shared among multiple decks. To access memory cells of a selected memory array on one deck, the deck selection circuitry corresponding to the memory array may each be activated, while the deck selection circuitry corresponding to a non-selected memory array on another deck may be deactivated. The deck selection circuitry, such as transistors, may leverage thin-film manufacturing techniques, such as various techniques for forming vertical transistors.

Technologies for dynamic accelerator selection include a compute sled. The compute sled includes a network interface controller to communicate with a remote accelerator of an accelerator sled over a network, where the network interface controller includes a local accelerator and a compute engine. The compute engine is to obtain network telemetry data indicative of a level of bandwidth saturation of the network. The compute engine is also to determine whether to accelerate a function managed by the compute sled. The compute engine is further to determine, in response to a determination to accelerate the function, whether to offload the function to the remote accelerator of the accelerator sled based on the telemetry data. Also the compute engine is to assign, in response a determination not to offload the function to the remote accelerator, the function to the local accelerator of the network interface controller.

An electronic apparatus includes a circuit board, a memory chip mounted on the circuit board, a memory controller to control an operation of the memory chip, a conductive pattern including a first control line to connect from a first terminal of the memory chip to a first terminal of the memory chip and a second control line to connect from a second terminal of the memory controller to a second terminal of the memory chip, and a capacitive element to provide a termination voltage. The first control line is connected to the capacitive element and the second control line is not connected to the capacitive element.

An electronic apparatus includes a circuit board, a memory chip mounted on the circuit board, a memory controller to control an operation of the memory chip, a conductive pattern including a first control line to connect from a first terminal of the memory chip to a first terminal of the memory chip and a second control line to connect from a second terminal of the memory controller to a second terminal of the memory chip, and a capacitive element to provide a termination voltage. The first control line is connected to the capacitive element and the second control line is not connected to the capacitive element.