Memory devices are disclosed. A memory device may include a source (SRC) plate configured to couple to a number of memory cells. The memory device may also include a resistor coupled between the source plate and a node. Further, the memory device may include at least one transistor coupled between the source plate and the ground voltage, wherein a gate of the at least one transistor is coupled to the node. The transistor may be configured to couple the SRC plate to the ground voltage during a processing stage. The transistor may further be configured to isolate the SRC plate from the ground voltage during an operation stage. Methods and electronic systems are also disclosed.

A method includes performing a first read operation on a memory cell of a programmed first one-time programmable (OTP) anti-fuse to determine a state of the memory cell based on a first parameter level, performing a second read operation on the memory cell of the programmed first OTP anti-fuse to determine the state of the memory cell based on a second parameter level, identifying the memory cell of the first OTP anti-fuse as an uncertain bit when the state determined during the first read operation and the state determined during the second read operation are different, and programing one or more memory cells of a second OTP anti-fuse based on a bit position of the identified uncertain bit of the first OTP anti-fuse.

A method includes performing a first read operation on a memory cell of a programmed first one-time programmable (OTP) anti-fuse to determine a state of the memory cell based on a first parameter level, performing a second read operation on the memory cell of the programmed first OTP anti-fuse to determine the state of the memory cell based on a second parameter level, identifying the memory cell of the first OTP anti-fuse as an uncertain bit when the state determined during the first read operation and the state determined during the second read operation are different, and programing one or more memory cells of a second OTP anti-fuse based on a bit position of the identified uncertain bit of the first OTP anti-fuse.

Various embodiments of the present technology may provide methods and system for an integrated circuit. The system may provide a plurality of integrated circuits (i.e., slave devices) connected to and configured to communicate with a host device. Each integrated circuit may comprise a register storing a common default address. Each integrated circuit may further comprise an interface circuit configured to overwrite the default address of one integrated circuit with a new address while preventing changes to the remaining integrated circuits.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

A device which can be implemented on a single packaged integrated circuit or a multichip module comprises a plurality of non-volatile memory cells, and logic to use a physical unclonable function to produce a key and to store the key in a set of non-volatile memory cells in the plurality of non-volatile memory cells. The physical unclonable function can use entropy derived from non-volatile memory cells in the plurality of non-volatile memory cells to produce a key. Logic is described to disable changes to data in the set of non-volatile memory cells, and thereby freeze the key after it is stored in the set.

Systems, apparatuses, and methods related to a computer system having a page table entry containing permission bits for predefined types of memory accesses made by executions of routines in predefined domains are described. The page table entry can be used to map a virtual memory address to a physical memory address. In response to a routine accessing the virtual memory address, a permission bit corresponding to the execution domain of the routine and a type of the memory access can be extracted from the page table entry to determine whether the memory access is to be rejected.

Systems, apparatuses, and methods related to a computer system having a page table entry containing permission bits for predefined types of memory accesses made by executions of routines in predefined domains are described. The page table entry can be used to map a virtual memory address to a physical memory address. In response to a routine accessing the virtual memory address, a permission bit corresponding to the execution domain of the routine and a type of the memory access can be extracted from the page table entry to determine whether the memory access is to be rejected.

In an embodiment, a method for protecting an electronic circuit includes: detecting a malfunction of the electronic circuit; executing a plurality of waves of countermeasures without interrupting an operation of the electronic circuit; and triggering a reset of the electronic circuit after executing the plurality of waves of countermeasures. An interval between two waves of countermeasures of the plurality of waves of countermeasures is variable.

In an embodiment, a method for protecting an electronic circuit includes: detecting a malfunction of the electronic circuit; executing a plurality of waves of countermeasures without interrupting an operation of the electronic circuit; and triggering a reset of the electronic circuit after executing the plurality of waves of countermeasures. An interval between two waves of countermeasures of the plurality of waves of countermeasures is variable.