A three dimensional circuit system includes a first integrated circuit die having a core logic region that has first memory circuits and logic circuits. The three dimensional circuit system includes a second integrated circuit die that has second memory circuits. The first and second integrated circuit dies are coupled together in a vertically stacked configuration. The three dimensional circuit system includes third memory circuits coupled to the first integrated circuit die. The third memory circuits reside in a plane of the first integrated circuit die. The logic circuits are coupled to access the first, second, and third memory circuits and data can move between the first, second, and third memories. The third memory circuits have a larger memory capacity and a smaller memory access bandwidth than the second memory circuits. The second memory circuits have a larger memory capacity and a smaller memory access bandwidth than the first memory circuits.

A semiconductor storage device and its writing method are provided. A memory cell array is formed on a substrate, and the memory cell array has an NOR array with an NOR flash memory structure and a resistive random access array with a resistive random access memory (RRAM) structure. A read/write control unit charges a selected global bit line when a set write operation is performed on a selected memory cell of the resistive random access array, and a set write voltage is applied to the selected memory cell by applying a voltage charging the selected global bit line.

Methods, systems, and devices for programmable column access are described. A device may transfer voltages from memory cells of a row in a memory array to respective digit lines for the memory cells. The voltages may be indicative of logic values stored at the memory cells. The device may communicate respective control signals to a set of multiplexers coupled with the digit lines, where each multiplexer is coupled with a respective subset of the digit lines. Each multiplexer may couple a digit line of the respective subset of digit lines with a respective sense component for that multiplexer based on the respective control signal for that multiplexer.

A hybrid memory system provides rapid, persistent byte-addressable and block-addressable memory access to a host computer system by providing direct access to a both a volatile byte-addressable memory and a volatile block-addressable memory via the same parallel memory interface. The hybrid memory system also has at least a non-volatile block-addressable memory that allows the system to persist data even through a power-loss state. The hybrid memory system can copy and move data between any of the memories using local memory controllers to free up host system resources for other tasks.

A memory circuit includes a first memory array and a second memory array. The first memory array and the second memory array are independent. The first memory array includes a plurality of general bits and the second memory array includes a plurality of spare bits. An address of defective bit in the first memory array is stored in the second memory array, and the memory circuit repairs the defective bit by one of the spare bits according to the address.

A system includes a volatile storage device, a read-only memory (ROM), a memory built-in self-test (BIST) controller and a central processing unit (CPU). The CPU, upon occurrence of a reset event, executes a first instruction from the ROM to cause the CPU to copy a plurality of instructions from a range of addresses in the ROM to the volatile storage device. The CPU also executes a second instruction from the ROM to change a program counter. The CPU further executes the plurality of instructions from the volatile storage device using the program counter. The CPU, when executing the plurality of instructions from the volatile storage device, causes the ROM to enter a test mode and the memory BIST controller to be configured to test the ROM.

The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller comprising first random access memory (RAM1), second random access memory (RAM2), and a storage unit divided into a plurality of zones. By restricting the host to have a minimum write size, the data transfer speed to RAM2, RAM1, and the storage unit can be optimized. A temporary buffer is utilized within the RAM1 to update parity data for the corresponding commands. The parity data is updated in the RAM1 and written to the RAM2 in the corresponding zone. The parity data may be copied from the RAM2 to the RAM1 to update the parity data in the temporary buffer when commands are received to write data to corresponding zones. As the parity data is updated, the corresponding command is simultaneously written to the corresponding zone.

A semiconductor device includes a logic circuit, a memory, and a storage device. The storage device has a first special information storage region into which special information is written before a solder reflow process, a second special information storage region into which special information for updating is written after the solder reflow process, and a data storage region. The first special information storage region is constituted by a memory cell having a high reflow resistance and in which data is retained even after the solder reflow process. The second special information storage region and the data storage region are constituted by memory cells having a low reflow resistance and in which data may not be retained during the solder reflow process.

A semiconductor storage device capable of achieving low power and high integration is provided. A non-volatile semiconductor memory of the disclosure includes a memory cell array. The memory cell array has a NOR array with a NOR flash memory structure and a variable resistance array with a variable resistance memory structure formed on a substrate. An entry gate is formed between the NOR array and the variable resistance array. When the NOR array is accessed, the entry gate separates the variable resistance array from the NOR array.

Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.