Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a first magnetic member having a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in a first direction from the first portion to the second portion; a third wiring that is electrically insulated from the first magnetic member; and a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit supplying a current pulse, in which a trailing time is longer than a rising time, to the third wiring.

A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a first magnetic member having a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in a first direction from the first portion to the second portion; a third wiring that is electrically insulated from the first magnetic member; and a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit supplying a current pulse, in which a trailing time is longer than a rising time, to the third wiring.

The disclosure is directed to spin-orbit torque MRAM structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.

Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

A spin-orbit torque (SOT) measuring apparatus includes a photoelastic modulator (PEM) configured to periodically modulate a polarization direction of linearly polarized incident light and emit a periodically modulated light, a first polarization rotator configured to rotate a polarization direction of the periodically modulated light, a voltage generator configured to generate an AC current to a sample to which light with the rotated polarization direction is to be emitted, a prism configured to split light reflected into first light and second light having different polarization directions, a balanced detector configured to output a signal corresponding to an intensity difference between the first light and the second light, a changing circuit configured to change a frequency component to the intensity difference, and an amplitude measurer configured to measure an amplitude of a frequency component corresponding to a modulation frequency of the PEM with the changed frequency component.

Technologies for non-uniform random number generation are disclosed. In one embodiment, the distribution of resistance of a magnetic tunnel junction (MTJ) can be controlled by applying a mechanical strain with a piezoelectric layer and by applying a spin torque by a spin-orbit torque layer. The distribution of resistance can be approximately a Gaussian distribution. In another embodiment, an array of N probabilistic bits (p-bits) has a bias and feedback matrix that result in the array of p-bits outputting an N-bit random number with a non-uniform distribution, such as a Gaussian distribution.

A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.