A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

A volatile memory circuit includes a first flip-flop, a second flip-flop having a set input coupled to an output of the first flip-flop. Logic circuitry of the memory circuit logically combines an output of the second flip-flop and information representative of the output of the first flip-flop to generate an output of the memory circuit. In response to a read command, the first flip-flop is reset and content of the second flip-flop is output by the circuit.

A volatile memory circuit includes a first flip-flop, a second flip-flop having a set input coupled to an output of the first flip-flop. Logic circuitry of the memory circuit logically combines an output of the second flip-flop and information representative of the output of the first flip-flop to generate an output of the memory circuit. In response to a read command, the first flip-flop is reset and content of the second flip-flop is output by the circuit.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

A device includes an upper metallic layer, a lower layer, and a memory array positioned between the upper and lower layers, wherein the memory electrical characteristic changes when storing data.

A device includes an upper metallic layer, a lower layer, and a memory array positioned between the upper and lower layers, wherein the memory electrical characteristic changes when storing data.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.