A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement circuits configured to compensate for parameter variations in layers of memory by adjusting access signals during memory operations. In some embodiments, memory cells are based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes multiple layers of memory, a layer including sub-layers of semiconductor material. The integrated circuit also includes an access signal generator configured to generate an access signal to facilitate an access operation, and a characteristic adjuster configured to adjust the access signal for each layer in the multiple layers of memory.

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement circuits configured to compensate for parameter variations in layers of memory by adjusting access signals during memory operations. In some embodiments, memory cells are based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes multiple layers of memory, a layer including sub-layers of semiconductor material. The integrated circuit also includes an access signal generator configured to generate an access signal to facilitate an access operation, and a characteristic adjuster configured to adjust the access signal for each layer in the multiple layers of memory.

Systems, integrated circuits, and methods to utilize access signals to facilitate memory operations in scaled arrays of memory elements are described. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements and line driver. The line driver can be configured to access a resistive memory element in the cross-point array.

Systems, integrated circuits, and methods to utilize access signals to facilitate memory operations in scaled arrays of memory elements are described. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements and line driver. The line driver can be configured to access a resistive memory element in the cross-point array.

An example device comprising contactless circuitry to receive data about a plurality of events corresponding to an asset, and a memristor coupled to the contactless circuitry to store the data about the plurality of events. The contactless circuitry may determine that the asset has experienced an event, receive a transaction corresponding to the event from a decentralized entity, generate a hash of the transaction including a device identifier of the contactless circuitry and the transaction received from the decentralized entity, verify the hashed transaction with the decentralized entity, and store the verified hashed transaction on the memristor of the contactless circuitry, wherein the stored verified hash includes information about the event.

An example device comprising contactless circuitry to receive data about a plurality of events corresponding to an asset, and a memristor coupled to the contactless circuitry to store the data about the plurality of events. The contactless circuitry may determine that the asset has experienced an event, receive a transaction corresponding to the event from a decentralized entity, generate a hash of the transaction including a device identifier of the contactless circuitry and the transaction received from the decentralized entity, verify the hashed transaction with the decentralized entity, and store the verified hashed transaction on the memristor of the contactless circuitry, wherein the stored verified hash includes information about the event.

A semiconductor memory includes a first and a second transistor each with one of source/drain connected to a first wiring. The other of the source/drain for each of first and second transistor is connected to the gate of the other transistor. A third and a fourth transistor each have gates connected to a second wiring, one of source/drain of each connected to a third or fifth wiring, the other of the source/drain connected to the other of the source/drain of the first or second transistor. For the third transistor, a gate insulation layer includes a first ferroelectric material. For the fourth transistor, and a gate insulation layer includes a second ferroelectric material.

A semiconductor memory includes a first and a second transistor each with one of source/drain connected to a first wiring. The other of the source/drain for each of first and second transistor is connected to the gate of the other transistor. A third and a fourth transistor each have gates connected to a second wiring, one of source/drain of each connected to a third or fifth wiring, the other of the source/drain connected to the other of the source/drain of the first or second transistor. For the third transistor, a gate insulation layer includes a first ferroelectric material. For the fourth transistor, and a gate insulation layer includes a second ferroelectric material.

A volatile memory circuit includes a first flip-flop, a second flip-flop having a set input coupled to an output of the first flip-flop. Logic circuitry of the memory circuit logically combines an output of the second flip-flop and information representative of the output of the first flip-flop to generate an output of the memory circuit. In response to a read command, the first flip-flop is reset and content of the second flip-flop is output by the circuit.