A processing device receives a request specifying a logical address associated with a host-initiated operation directed at a first portion of a memory device. The processing device accesses a second L2P table comprising a mapping between logical addresses and physical addresses in a second portion of the memory device. A physical location within the second portion of the memory device is identified based on the second L2P table. The physical location corresponds to a portion of a first L2P table that specifies a physical address within the first portion of the memory device that corresponds to the logical address. The physical address is identified based on the portion of the first L2P table and the host-initiated operation is performed at the physical address.

2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.

2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.

A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

A control circuit for a neural network system includes a first multiply accumulate circuit, a first neuron value storage circuit and a first processor. The first multiply accumulate circuit includes n memristive cells. The first terminals of the n memristive cells receive a supply voltage. The second terminals of the n memristive cells are connected with a first bit line. The control terminals of the n memristive cells are respectively connected with n word lines. Moreover, n neuron values of a first layer are stored in the first neuron value storage circuit. In an application phase, the first neuron value storage circuit controls the n word lines according to binary codes of the n neuron values. The first processor generates a first neuron value of a second layer.

Implementations described and claimed herein provide a high-capacity, high-bandwidth scalable storage device. The scalable storage device includes a layer stack including at least one memory layer and at least one optical control layer positioned adjacent to the memory layer. The memory layer includes a plurality of memory cells and the optical control layer is adapted to receive optically-encoded read/write signals and to effect read and write operations to the plurality of memory cells through an electrical interface.

An optical mechanism and an optical system for optical-medium storage. The mechanism includes an optical-medium storage device, and an optical-medium transmission device. The optical-medium storage device is provided with an optical-medium storage module, configured to store an optical medium, and an optical-medium input-output end, configured to receive and transmit the optical medium to the optical-medium storage module and read data from the optical-medium storage module. The optical-medium receiving module is configured to receive the optical medium transmitted from outside and transmit the optical medium to the optical-medium storage module via the optical-medium input-output end, according to a receiving instruction. The optical-medium storing module is configured to form a storage path for the optical medium with the optical-medium storage module. The optical-medium reading module is configured to provide an interface for reading and read the optical medium stored in the optical-medium storage module, according to a reading instruction.

A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).

A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).