Patent classifications
G11C13/04
Data shifting circuit for a current mode display
Techniques are described for operating a display comprising an array of emitters arranged in at least one column. A data shifting circuit stores digital data or an analog representation thereof in a first storage element. The data shifting circuit outputs the digital data or analog representation multiple times to a display driver circuit, using a multiplexer. The first storage element can be a shift register or a capacitor. Digital data can be internally shifted within the data shifting circuit, through multiple shift registers, prior to output to the display driver circuit. An analog representation can be stored and read from the same capacitor without internal shifting. The display driver circuit drives a different emitter of the column each time. A scanning assembly including a reflective surface that receives light from the emitter array forms an output image by rotating the reflective surface in synchronization with driving of the emitters.
Data shifting circuit for a current mode display
Techniques are described for operating a display comprising an array of emitters arranged in at least one column. A data shifting circuit stores digital data or an analog representation thereof in a first storage element. The data shifting circuit outputs the digital data or analog representation multiple times to a display driver circuit, using a multiplexer. The first storage element can be a shift register or a capacitor. Digital data can be internally shifted within the data shifting circuit, through multiple shift registers, prior to output to the display driver circuit. An analog representation can be stored and read from the same capacitor without internal shifting. The display driver circuit drives a different emitter of the column each time. A scanning assembly including a reflective surface that receives light from the emitter array forms an output image by rotating the reflective surface in synchronization with driving of the emitters.
TIME DIVISION MULTIPLEXING (TDM) BASED OPTICAL TERNARY CONTENT ADDRESSABLE MEMORY (TCAM)
Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.
MAGNETIC PROPERTY MEASURING SYSTEMS, METHODS FOR MEASURING MAGNETIC PROPERTIES, AND METHODS FOR MANUFACTURING MAGNETIC MEMORY DEVICES USING THE SAME
A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.
Photonic device
A photonic device (100) comprising: an optical waveguide (101), and a modulating element (102) that is evanescently coupled to the waveguide (101); wherein the modulating element (102) modifies a transmission, reflection or absorption characteristic of the waveguide (101) dependant on its state, and the state of the modulating element (102) is switchable by an optical switching signal (125) carried by the waveguide (101), or by an electrical signal that heats the modulating element (102).
Photonic device
A photonic device (100) comprising: an optical waveguide (101), and a modulating element (102) that is evanescently coupled to the waveguide (101); wherein the modulating element (102) modifies a transmission, reflection or absorption characteristic of the waveguide (101) dependant on its state, and the state of the modulating element (102) is switchable by an optical switching signal (125) carried by the waveguide (101), or by an electrical signal that heats the modulating element (102).
OPTICALLY SWITCHABLE MEMORY
A method of manufacturing a storage device for storing information, apparatus for storing information, an optical memristor device and a memory cell are disclosed. A method comprises providing at least one first electrode and at least one further electrode and providing each of at least one region of a first material between, and in electrical connection with, a respective first electrode and a further electrode whereby said step of providing at least one region comprises providing in the first material, a plurality of changeable particles that have charge storage capacity and at least one electrical property that is reversibly changeable responsive to absorption of incident electromagnetic radiation.
OPTOELECTRONIC DEVICE AND MEMORY DEVICE
The present invention relates to an optoelectronic device. The optoelectronic device disclosed in the present invention includes: a carrier; and a light controllable layer patterned to be formed on the carrier, so as to form at least one light controllable element, where the at least one light controllable element is independently controllable by a light beam, so that the at least one light controllable element is switchable between two or more states.
Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing
Disclosed is a cell that integrates a pixel and a three-terminal non-volatile memory device. The cell can be selectively operated in write, read and functional computing modes. In the write mode, a first data value is stored in the memory device. In the read mode, it is read from the memory device. In the functional computing mode, the pixel captures a second data value and a sensed change in an electrical parameter (e.g., voltage or current) on a bitline connected to the cell is a function of both the first and second data value. Also disclosed is an IC structure that includes an array of the cells and, when multiple cells in a given column are concurrently operated in the functional computing mode, the sensed total change in the electrical parameter on the bitline for the column is indicative of a result of a dot product computation.
Magnetic property measuring systems, methods for measuring magnetic properties, and methods for manufacturing magnetic memory devices using the same
A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.