A storage device includes a nonvolatile memory device, a random access memory that includes a first region and a second region, and a controller that is configured to use the first region of the random access memory as a journal memory for a journal indicating modification of data of the second region, expose a user region of the nonvolatile memory device to an external host device as a first access region of a block unit, and expose the second region of the random access memory to the external host device as both a second access region of the block unit and a third access region of a byte unit.

Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

A DRAM-based storage device includes a DRAM and a control circuit. The DRAM includes a buffering area and a host accessing area. A data is stored in the host accessing area. The control circuit is electrically connected with the DRAM. The control circuit copies a portion of the data from the host accessing area to the buffering area at a predetermined time interval counted by the control circuit. Before the portion of the data is written to the buffering area, a first ECC decoding operation is performed on the portion of the data to correct error bits contained therein. If the portion of the data is corrected, the control circuit rewrites the corrected portion of the data into the host accessing area.

Technologies for dynamically allocating resources within a self-managed node include a self-managed node to receive quality of service objective data indicative of a performance objective of one or more workloads assigned to the self-managed node. Each workload includes one or more tasks. The self-managed node is also to execute the one or more tasks to perform the one or more workloads, obtain telemetry data as the workloads are performed, determine, as a function of the telemetry data, an adjustment to the allocation of resources among the workloads to satisfy the performance objective, and apply the determined adjustment as the workloads are performed by the self-managed node. Other embodiments are also described and claimed.

Embodiments are generally directed apparatuses, methods, techniques and so forth to receive a sled manifest comprising identifiers for physical resources of a sled, receive results of an authentication and validation operations performed to authenticate and validate the physical resources of the sled, determine whether the results of the authentication and validation operations indicate the physical resources are authenticate or not authenticate. Further and in response to the determination that the results indicate the physical resources are authenticated, permit the physical resources to process a workload, and in response to the determination that the results indicate the physical resources are not authenticated, prevent the physical resources from processing the workload.

Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Technologies for a low-latency interface with data storage of a storage sled in a data center are disclosed. In the illustrative embodiment, a storage sled stores metadata including the location of data in a storage device in low-latency non-volatile memory. When accessing data, the storage sled may access the metadata on the low-latency non-volatile memory and then, based on the location determined by the access to the metadata, access the location of the data in the storage device. Such an approach results in only one access to the data storage in order to read the data instead of two.

A memory device includes a memory cell array that includes a plurality of memory cell rows, a temperature sensor that detects a temperature of the memory cell array and generates internal temperature data, a first register that stores external temperature data received from outside of the memory device, and a refresh control unit that determines a skip ratio of refresh commands received at a refresh frequency that corresponds to the external temperature data by comparing the internal temperature data and the external temperature data and performing a refresh operation for the plurality of memory cell rows in response to refresh commands skipped and transmitted based on the skip ratio.

Apparatuses and methods for calibrating sense amplifiers in a semiconductor memory are disclosed. An example apparatus includes an amplifier circuit and a calibration circuit. The amplifier circuit is configured to be coupled to a supply voltage and a reference voltage, and when activated the amplifier circuit is configured to provide an output signal at an output that is complementary to an input signal provided to an input. When activated by a calibration signal, the calibration circuit is configured to provide a calibration voltage to the output of the amplifier circuit, wherein the calibration voltage is an equilibration voltage between the supply voltage and the reference voltage provided to the amplifier circuit.

Technologies for combining logical-to-physical address updates include a data storage device. The data storage device includes a non-volatile memory to store data and a logical to physical (L2P) table indicative of logical addresses and associated physical addresses of the data. Additionally, the data storage device includes a volatile memory to store one or more bins. Each bin is indicative of a subset of entries in the L2P table. Further, the data storage device includes a controller to allocate a bin in the volatile memory, write a plurality of updates to a subset of entries of the L2P table to the bin, and write the bin to the L2P table in a single write operation. Other embodiments are also described and claimed.