Techniques for implementing a fault-tolerant power supply are described. In an example, a system converts an alternating-current (AC) voltage to an initial direct current (DC) voltage. The system further converts the initial DC voltage to a first DC voltage and a second DC voltage. The system applies the first DC voltage to a high-priority device such as a metrology device. The system applies the second DC voltage to a low-priority or peripheral device. When the initial DC voltage is outside a voltage range, the system deactivates the second DC voltage to the lower-priority device and maintains the first DC voltage to the metrology device.

A processing system includes a content addressable memory (CAM) in an input/output path to selectively modify register writes on a per-pipeline basis. The CAM compares an address of a register write to an address field of each entry of the CAM. If a match is found, the CAM modifies the register write data as defined by a function for the matching entry of the CAM. In some embodiments, each entry of the CAM includes a data mask defining subfields of the register write data, wherein each subfield includes subfield data including one or more bits.

A processing system includes a content addressable memory (CAM) in an input/output path to selectively modify register writes on a per-pipeline basis. The CAM compares an address of a register write to an address field of each entry of the CAM. If a match is found, the CAM modifies the register write data as defined by a function for the matching entry of the CAM. In some embodiments, each entry of the CAM includes a data mask defining subfields of the register write data, wherein each subfield includes subfield data including one or more bits.

Some embodiments of the present disclosure provide an associatively indexed circular buffer (ACB). The ACB may be viewed as a dynamically allocatable memory structure that offers in-order data access (say, first-in-first-out, or “FIFO”) or random order data access at a fixed, relatively low latency. The ACB includes a data store of non-contiguous storage. To manage the pushing of data to, and popping data from, the data store, the ACB includes a contiguous pointer generator, a content addressable memory (CAM) and a free pool.

Some embodiments of the present disclosure provide an associatively indexed circular buffer (ACB). The ACB may be viewed as a dynamically allocatable memory structure that offers in-order data access (say, first-in-first-out, or “FIFO”) or random order data access at a fixed, relatively low latency. The ACB includes a data store of non-contiguous storage. To manage the pushing of data to, and popping data from, the data store, the ACB includes a contiguous pointer generator, a content addressable memory (CAM) and a free pool.

Semiconductor structures and methods for crystalline junctionless transistors used in nonvolatile memory arrays are introduced. Various embodiments in accordance with this disclosure provide a method of fabricating a monolithic 3D cross-bar nonvolatile memory array with low thermal budget. The method incorporates crystalline junctionless transistors into nonvolatile memory structures by transferring a layer of doped crystalline semiconductor material from a seed wafer to form the source, drain, and connecting channel of the junctionless transistor.

A semiconductor device includes: a stack structure including conductive patterns and insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; and a memory layer penetrating the stack structure, the memory layer being disposed between the channel structure and the stack structure. The memory layer includes memory parts and dummy parts, which are alternately arranged. Each of the memory parts includes a first part between the insulating layers and a second part between the dummy parts. The first part of the memory parts have ferroelectricity.

A semiconductor device includes: a stack structure including conductive patterns and insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; and a memory layer penetrating the stack structure, the memory layer being disposed between the channel structure and the stack structure. The memory layer includes memory parts and dummy parts, which are alternately arranged. Each of the memory parts includes a first part between the insulating layers and a second part between the dummy parts. The first part of the memory parts have ferroelectricity.

A multilevel content addressable memory, a multilevel coding method and a multilevel searching method are provided. The multilevel coding method includes the following steps. A highest decimal value of a multilevel-bit binary data is obtained. A length of a digital string data is set as being the highest decimal value of the multilevel-bit binary data. The multilevel-bit binary data is converted into the digital string data. If a content of the multilevel-bit binary data is an exact value, a number of an indicating bit in the digital string data is the exact value.

A multilevel content addressable memory, a multilevel coding method and a multilevel searching method are provided. The multilevel coding method includes the following steps. A highest decimal value of a multilevel-bit binary data is obtained. A length of a digital string data is set as being the highest decimal value of the multilevel-bit binary data. The multilevel-bit binary data is converted into the digital string data. If a content of the multilevel-bit binary data is an exact value, a number of an indicating bit in the digital string data is the exact value.