Present disclosure relates to a method and a system for searching through a Ternary Content Addressable Memory (TCAM). The system comprises a Digital Light Processing System (DLP) receiving an input query. The DLP comprises a 2-Dimensional array of digital micro mirrors configured for reflecting light from one or more input sources in the TCAM to a predefined position. The system further comprises a detection screen having a detection area. The detection area is configured for generating an image of a resultant pixel according to the reflection of the light, wherein the resultant pixel corresponds to a search result for an input query.

Present disclosure relates to a method and a system for searching through a Ternary Content Addressable Memory (TCAM). The system comprises a Digital Light Processing System (DLP) receiving an input query. The DLP comprises a 2-Dimensional array of digital micro mirrors configured for reflecting light from one or more input sources in the TCAM to a predefined position. The system further comprises a detection screen having a detection area. The detection area is configured for generating an image of a resultant pixel according to the reflection of the light, wherein the resultant pixel corresponds to a search result for an input query.

An algorithmic TCAM based ternary lookup method is provided. The method stores entries for ternary lookup into several sub-tables. All entries in each sub-table have a sub-table key that includes the same common portion of the entry. No two sub-tables are associated with the same sub-table key. The method stores the keys in a sub-table keys table in TCAM. Each key has a different priority. The method stores the entries for each sub-table in random access memory. Each entry in a sub-table has a different priority. The method receives a search request to perform a ternary lookup for an input data item. A ternary lookup into the ternary sub-table key table stored in TCAM is performed to retrieve a sub-table index. The method performs a ternary lookup across the entries of the sub-table associated with the retrieved index to identify the highest priority matched entry for the input data item.

There are increasing needs of searching on which data in a storage circuit is most similar to input information from the outside. Expectations for storage circuits having such memory techniques are high, and to enable a computer to handle information from the outside more flexibly is considered an essential technique. To achieve such techniques, a storage circuit needs to have a function of measuring a degree of similarity between stored data and input data. In an approximate-search-circuit, a memory matrix of a conventional storage circuit is caused to function as a data conversion circuit for calculating the inner-product distance between stored data and input data, by inputting the input data to the memory matrix in the form of a time series of pulse-signals, and the location of stored data with the highest inner-product is output from a circuit that calculates the inner-product in real time.

There are increasing needs of searching on which data in a storage circuit is most similar to input information from the outside. Expectations for storage circuits having such memory techniques are high, and to enable a computer to handle information from the outside more flexibly is considered an essential technique. To achieve such techniques, a storage circuit needs to have a function of measuring a degree of similarity between stored data and input data. In an approximate-search-circuit, a memory matrix of a conventional storage circuit is caused to function as a data conversion circuit for calculating the inner-product distance between stored data and input data, by inputting the input data to the memory matrix in the form of a time series of pulse-signals, and the location of stored data with the highest inner-product is output from a circuit that calculates the inner-product in real time.

A semiconductor device includes: a stack structure including conductive patterns and insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; and a memory layer penetrating the stack structure, the memory layer being disposed between the channel structure and the stack structure. The memory layer includes memory parts and dummy parts, which are alternately arranged. Each of the memory parts includes a first part between the insulating layers and a second part between the dummy parts. The first part of the memory parts have ferroelectricity.

A semiconductor device includes: a stack structure including conductive patterns and insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; and a memory layer penetrating the stack structure, the memory layer being disposed between the channel structure and the stack structure. The memory layer includes memory parts and dummy parts, which are alternately arranged. Each of the memory parts includes a first part between the insulating layers and a second part between the dummy parts. The first part of the memory parts have ferroelectricity.

A multilevel content addressable memory, a multilevel coding method and a multilevel searching method are provided. The multilevel coding method includes the following steps. A highest decimal value of a multilevel-bit binary data is obtained. A length of a digital string data is set as being the highest decimal value of the multilevel-bit binary data. The multilevel-bit binary data is converted into the digital string data. If a content of the multilevel-bit binary data is an exact value, a number of an indicating bit in the digital string data is the exact value.

A multilevel content addressable memory, a multilevel coding method and a multilevel searching method are provided. The multilevel coding method includes the following steps. A highest decimal value of a multilevel-bit binary data is obtained. A length of a digital string data is set as being the highest decimal value of the multilevel-bit binary data. The multilevel-bit binary data is converted into the digital string data. If a content of the multilevel-bit binary data is an exact value, a number of an indicating bit in the digital string data is the exact value.

A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising: responsive to receiving a memory access command, determining that the memory access command is a dual-address command comprising a source address and a destination address; generating a first content addressable memory (CAM) entry associated with a read command of the dual-address command, wherein the first CAM entry references the source address; generating a second CAM entry associated with a write command of the dual-address command, wherein the second CAM entry references the destination address; inserting the first CAM entry and the second CAM entry into a CAM; and issuing, to the memory device, the read command associated with the first CAM entry.