A 3D semiconductor device including: a first level including a single crystal layer, a plurality of first transistors and at least one metal layer, where the at least one metal layer overlays the single crystal layer and includes interconnects between the first transistors forming control circuits; a second level overlaying the at least one metal layer, the second level including a plurality of second transistors; a third level overlaying the second level, the third level including a plurality of third transistors; and polysilicon pillars, where the second level includes a plurality of first memory cells, the first memory cells each including at least one of the second transistors, where the third level includes a plurality of second memory cells, the second memory cells each including at least one of the third transistors, where at least one of the second memory cells is at least partially atop of the control circuits.

According to one embodiment, a memory device, includes a first memory cell, and a second memory cell adjacent to the first memory cell; and a sequencer configured to, when data is read from the first memory cell: perform a first read operation on the second memory cell; perform a second read operation on the first memory cell; perform a third read operation on the first memory cell by applying a voltage different from that applied in the second read operation to a gate of the second memory cell; and generate first data stored in the first memory cell and second data for correcting the first data, based on results of the first to third read operations.

According to one embodiment, a memory device, includes a first memory cell, and a second memory cell adjacent to the first memory cell; and a sequencer configured to, when data is read from the first memory cell: perform a first read operation on the second memory cell; perform a second read operation on the first memory cell; perform a third read operation on the first memory cell by applying a voltage different from that applied in the second read operation to a gate of the second memory cell; and generate first data stored in the first memory cell and second data for correcting the first data, based on results of the first to third read operations.

A non-volatile memory integrated circuit has a memory plane organized into rows and into columns containing bit lines. The read amplifiers for each bit line are configured to generate an output signal on a read data channel. The read data channels respectively run through the memory plane along each bit line. Each read data channel is connected to all of the read amplifiers of the respective bit line.

An object of the present invention is to increase a writing speed to a flash memory while suppressing an increase in noise. In the high-speed write mode, the memory controller simultaneously performs a first write operation with a second write current having a current value smaller than the first write current with respect to a second number of memory cells having a larger number than the first write current. At the completion of the first write operation, the memory controller simultaneously performs the second write operation by the third write current having a larger current value than the second write current with respect to the memory cell determined by the sense amplifier to have not completed the write operation in the determination process.

A NAND flash controlling method includes the steps of: configuring a temperature-sensing unit to detect the flash temperatures and a source block to store source data; configuring a main control unit to receive the flash temperatures for calculating a temperature difference, to generate a data-transmitting signal if the current temperature is abnormal and the temperature difference is too large; configuring a control unit to read and transmit the source data; configuring a data-buffering unit to receive and store the source data; configuring an error-correcting unit to receive a source error-correcting code and a source bit-error rate to re-calculate an updated error-correcting code; configuring a flash-buffering unit to receive the updated error-correcting code and the source data; and, configuring the control unit to utilize the updated error-correcting code to write the source data into the destination block from the flash-buffering unit. In addition, a NAND flash controlling system is also provided.

A NAND flash controlling method includes the steps of: configuring a temperature-sensing unit to detect the flash temperatures and a source block to store source data; configuring a main control unit to receive the flash temperatures for calculating a temperature difference, to generate a data-transmitting signal if the current temperature is abnormal and the temperature difference is too large; configuring a control unit to read and transmit the source data; configuring a data-buffering unit to receive and store the source data; configuring an error-correcting unit to receive a source error-correcting code and a source bit-error rate to re-calculate an updated error-correcting code; configuring a flash-buffering unit to receive the updated error-correcting code and the source data; and, configuring the control unit to utilize the updated error-correcting code to write the source data into the destination block from the flash-buffering unit. In addition, a NAND flash controlling system is also provided.

According to one embodiment, a memory device, includes a first memory cell, and a second memory cell adjacent to the first memory cell; and a sequencer configured to, when data is read from the first memory cell: perform a first read operation on the second memory cell; perform a second read operation on the first memory cell; perform a third read operation on the first memory cell by applying a voltage different from that applied in the second read operation to a gate of the second memory cell; and generate first data stored in the first memory cell and second data for correcting the first data, based on results of the first to third read operations.

According to one embodiment, a memory device, includes a first memory cell, and a second memory cell adjacent to the first memory cell; and a sequencer configured to, when data is read from the first memory cell: perform a first read operation on the second memory cell; perform a second read operation on the first memory cell; perform a third read operation on the first memory cell by applying a voltage different from that applied in the second read operation to a gate of the second memory cell; and generate first data stored in the first memory cell and second data for correcting the first data, based on results of the first to third read operations.

A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, and at least one first metal layer-which includes interconnects between the first transistors forming control circuits-which overlays the first single crystal layer; a second metal layer overlaying first metal layer; a second level including second transistors, first memory cells (each including at least one second transistor) and overlaying second metal layer; a third level including third transistors (at least one includes a polysilicon channel), second memory cells (each including at least one third transistor and cell is partially disposed atop control circuits) and overlaying the second level; control circuits control data written to second memory cells; third metal layer disposed above third level; fourth metal layer includes a global power distribution grid, has a thickness at least twice the second metal layer, and is disposed above third metal layer.