Disclosed is a method of fabricating a magnetic memory device. The method of a fabricating a magnetic memory device includes forming an interlayer dielectric layer on a substrate, forming a sacrificial pattern in the interlayer dielectric layer, forming a magnetic tunnel junction pattern on the sacrificial pattern, after forming the magnetic tunnel junction pattern, selectively removing the sacrificial pattern to form a bottom contact region in the interlayer dielectric layer, and forming a bottom contact in the bottom contact region.

According to one embodiment, a magnetic memory device includes first and second magnetic members, and a conductive member. The first magnetic member includes first, second, and third extending portions. The first extending portion extends along a first direction. The second extending portion extends along a second direction. The third extending portion includes a third connection portion connected with the first and second extending portions. The third extending portion extends along a third direction. The conductive member extends along a fourth direction. The first and second directions are inclined with respect to the fourth direction. The conductive member includes a portion overlapping at least parts of the first and second extending portions in a fifth direction. The fifth direction crosses the first, the second and the fourth directions. The conductive member includes a metal. A direction from the third extending portion toward the second magnetic member crosses the third direction.

According to one embodiment, a magnetic memory device includes first and second magnetic members, and a conductive member. The first magnetic member includes first, second, and third extending portions. The first extending portion extends along a first direction. The second extending portion extends along a second direction. The third extending portion includes a third connection portion connected with the first and second extending portions. The third extending portion extends along a third direction. The conductive member extends along a fourth direction. The first and second directions are inclined with respect to the fourth direction. The conductive member includes a portion overlapping at least parts of the first and second extending portions in a fifth direction. The fifth direction crosses the first, the second and the fourth directions. The conductive member includes a metal. A direction from the third extending portion toward the second magnetic member crosses the third direction.

According to one embodiment, a magnetic memory device includes first and second magnetic members, and a conductive member. The first magnetic member includes first, second, and third extending portions. The first extending portion extends along a first direction. The second extending portion extends along a second direction. The third extending portion includes a third connection portion connected with the first and second extending portions. The third extending portion extends along a third direction. The conductive member extends along a fourth direction. The first and second directions are inclined with respect to the fourth direction. The conductive member includes a portion overlapping at least parts of the first and second extending portions in a fifth direction. The fifth direction crosses the first, the second and the fourth directions. The conductive member includes a metal. A direction from the third extending portion toward the second magnetic member crosses the third direction.

According to one embodiment, a magnetic memory device includes first and second magnetic members, and a conductive member. The first magnetic member includes first, second, and third extending portions. The first extending portion extends along a first direction. The second extending portion extends along a second direction. The third extending portion includes a third connection portion connected with the first and second extending portions. The third extending portion extends along a third direction. The conductive member extends along a fourth direction. The first and second directions are inclined with respect to the fourth direction. The conductive member includes a portion overlapping at least parts of the first and second extending portions in a fifth direction. The fifth direction crosses the first, the second and the fourth directions. The conductive member includes a metal. A direction from the third extending portion toward the second magnetic member crosses the third direction.

Disclosed is a method of fabricating a magnetic memory device. The method of a fabricating a magnetic memory device includes forming an interlayer dielectric layer on a substrate, forming a sacrificial pattern in the interlayer dielectric layer, forming a magnetic tunnel junction pattern on the sacrificial pattern, after forming the magnetic tunnel junction pattern, selectively removing the sacrificial pattern to form a bottom contact region in the interlayer dielectric layer, and forming a bottom contact in the bottom contact region.

According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.

According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.

A semiconductor device includes a plurality of spin units individually including a memory cell configured to store values of spins in an Ising model, a memory cell configured to store an interaction coefficient from an adjacent spin that exerts an interaction on the spin, a memory cell configured to store an external magnetic field coefficient of the spin, and an interaction circuit configured to determine a subsequent state of the spin. The spin units individually include a random number generator configured to supply the random number to the plurality of the spin units and generate two-valued simulated coefficients of two values or simulated coefficients of three values in performing an interaction to determine a subsequent state of a spin of the spin units from a value of a spin from an adjacent spin unit, an interaction coefficient, and an external magnetic field coefficient.

A semiconductor device includes a plurality of spin units individually including a memory cell configured to store values of spins in an Ising model, a memory cell configured to store an interaction coefficient from an adjacent spin that exerts an interaction on the spin, a memory cell configured to store an external magnetic field coefficient of the spin, and an interaction circuit configured to determine a subsequent state of the spin. The spin units individually include a random number generator configured to supply the random number to the plurality of the spin units and generate two-valued simulated coefficients of two values or simulated coefficients of three values in performing an interaction to determine a subsequent state of a spin of the spin units from a value of a spin from an adjacent spin unit, an interaction coefficient, and an external magnetic field coefficient.