The present disclosure provides a shift resister unit, a gate driving circuit, a display device, and a method for controlling a shift register unit. The shift register unit incudes a first input sub-circuit, a first output sub-circuit, a first reset sub-circuit, a second input sub-circuit, and a third input sub-circuit. The first input sub-circuit is configured to change a potential of a first node in a first phase. The first output sub-circuit is configured to output a gate driving signal in the first phase and output a compensation driving signal in a second phase. The first reset sub-circuit is configured to reset the first node. The second input sub-circuit is configured to change a potential of a second node in the first phase and maintain the potential of the second node. The third input sub-circuit is configured to change the potential of the first node in the second phase.

A method is described that includes, on an image processor having a two dimensional execution lane array and a two dimensional shift register array, doubling a simultaneous shift amount of multiple rows or columns of the two dimensional shift register array with each next iteration. The method also includes executing one or more instructions within respective lanes of the two dimensional execution lane array in between shifts of iterations. Another method is described that includes, on an image processor having a two dimensional execution lane array and a two dimensional shift register array, repeatedly executing one or more instructions within respective lanes of the execution lane array that select between content in different registers of a same array location in between repeated simultaneous shifts of multiple rows or columns of data in the two dimensional shift register array.

A method is described that includes, on an image processor having a two dimensional execution lane array and a two dimensional shift register array, doubling a simultaneous shift amount of multiple rows or columns of the two dimensional shift register array with each next iteration. The method also includes executing one or more instructions within respective lanes of the two dimensional execution lane array in between shifts of iterations. Another method is described that includes, on an image processor having a two dimensional execution lane array and a two dimensional shift register array, repeatedly executing one or more instructions within respective lanes of the execution lane array that select between content in different registers of a same array location in between repeated simultaneous shifts of multiple rows or columns of data in the two dimensional shift register array.

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

The present disclosure relates to a comparator, an AD converter, a solid-state image pickup device, an electronic device, a method of controlling the comparator, a data writing circuit, a data reading circuit, and a data transferring circuit, capable of improving the determining speed of the comparator and reducing power consumption. The comparator includes: a differential input circuit configured to operate with a first power supply voltage, the differential input circuit configured to output a signal when an input signal is higher than a reference signal in voltage; a positive feedback circuit configured to operate with a second power supply voltage lower than the first power supply voltage, the positive feedback circuit being configured to accelerate transition speed when a compared result signal indicating a compared result between the input signal and the reference signal in voltage, is inverted, on the basis of the output signal of the differential input circuit; and a voltage conversion circuit configured to convert the output signal of the differential input circuit into a signal corresponding to the second power supply voltage. The present disclosure can be applied to, for example, a comparator of a solid-state image pickup device.

A shift register unit and a driving method thereof, a gate driving circuit, and a display device are provided. In the shift register unit, the input circuit inputs an input signal to a first node; the output circuit outputs an output signal to an output terminal; the first control circuit performs a first control on a level of a first control node; the first noise reduction control circuit controls a level of a second node; the second control circuit performs a second control on a level of a second control node; the second noise reduction control circuit controls a level of a third node; the first voltage-stabilizing circuit performs a third control on the level of the second control node, and the second control and the third control cause at least part of the second noise reduction control circuit to be in different bias states.

A shift register unit and a driving method thereof, a gate driving circuit, and a display device are provided. In the shift register unit, the input circuit inputs an input signal to a first node; the output circuit outputs an output signal to an output terminal; the first control circuit performs a first control on a level of a first control node; the first noise reduction control circuit controls a level of a second node; the second control circuit performs a second control on a level of a second control node; the second noise reduction control circuit controls a level of a third node; the first voltage-stabilizing circuit performs a third control on the level of the second control node, and the second control and the third control cause at least part of the second noise reduction control circuit to be in different bias states.

A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.

A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.