An analog CAM and an operation method thereof are provided. The analog CAM includes a matching line, an analog CAM cell and a sense amplifier. Each of the at least one analog CAM includes a first floating gate device having a N type channel and a second floating gate device having a P type channel. A match range is set through programming the first floating gate device and the second floating gate device. The sense amplifier is connected to the matching line. If an inputting signal is within the match range, a voltage of the matching line is pulled down to be equal to or lower than a predetermined level. The sense amplifier outputs a match result if the voltage of the matching line is pulled down to a predetermined level.

A tunable CMOS circuit comprising a CMOS element and a tunable load. The CMOS element is configured to receive in an analogue input signal. The tunable load is connected to the CMOS element and configured to set a switch point of the CMOS element. The CMOS element is configured to output an output current that is largest when the analogue input signal is equal to the switch point. The combination of a CMOS element with a tunable load may also provide a hardware implementation of fuzzy logic. A fuzzy logic gate comprises an input node, a CMOS logic gate including a tunable load, and an output node. The input node is configured to receive an analogue input signal. The CMOS logic gate is connected to the input node. The tunable load is provided on a current path connected to the output node. The output node is configured to output an analogue output signal.

A fine-grained analog memory device includes: 1) a charge-trapping transistor including a gate and a high-k gate dielectric; and 2) a pulse generator connected to the gate and configured to apply a positive or negative pulse to the gate to change an amount of charges trapped in the high-k gate dielectric.

An embodiment of a semiconductor apparatus may include technology to convert an analog voltage level of a memory cell of a multi-level memory to a multi-bit digital value, and determine a single-bit value of the memory cell based on the multi-bit digital value. Some embodiments may also include technology to track a temporal history of accesses to the memory cell for a duration in excess of ten seconds, and determine the single-bit value of the memory cell based on the multi-bit digital value and the temporal history. Other embodiments are disclosed and claimed.

A static random-access memory (SRAM) system includes SRAM cells configured to perform exclusive NOR operations between a stored binary weight value and a provided binary input value. In some embodiments, SRAM cells are configured to perform exclusive NOR operations between a stored binary weight value and a provided ternary input value. The SRAM cells are suitable for the efficient implementation of emerging deep neural network technologies such as binary neural networks and XNOR neural networks.

In an example, a memristor apparatus with variable transmission delay may include a first memristor programmable to have one of a plurality of distinct resistance levels, a second memristor, a transistor connected between the first memristor and the second memristor, and a capacitor having a capacitance, in which the capacitor is connected between the first memristor and the transistor. In addition, application of a reading voltage across the second memristor is delayed by a time period equivalent to the programmed resistance level of the first memristor and the capacitance of the capacitor.

The present disclosure describes analog memories for use in a computer, such as a computer using a combination of analog and digital components/elements used in a cohesive manner.

A device includes a non-volatile analog resistive memory cell. The non-volatile analog resistive memory device includes a resistive memory device and a select transistor. The resistive memory device includes a first terminal and a second terminal. The resistive memory device has a tunable conductance. The select transistor is a ferroelectric field-effect transistor (FeFET) device which includes a gate terminal, a source terminal, and a drain terminal. The gate terminal of the FeFET device is connected to a word line. The source terminal of the FeFET device is connected to a source line. The drain terminal of the FeFET device is connected to the first terminal of the resistive memory device. The second terminal of the resistive memory device is connected to a bit line.

An embodiment in the application may include an analog memory structure, and methods of writing to such a structure, including a volatile memory element in series with a non-volatile memory element. The analog memory structure may change resistance upon application of a voltage. This may enable accelerated writing of the analog memory structure.

An analog content addressable memory (aCAM) that enables parallel searching of analog ranges of values and generates analog outputs that quantify matches between input data and stored data is disclosed. The input data can be compared with the stored data, and the input data can be determined to match the stored data based on a value associated with the input data being within a range associated with the stored data. The aCAM can generate an analog output that represents a number of matches and a number of mismatches between the input data and the stored data. Based on the analog output, whether the input data matches the stored data and a degree to which the input data matches the stored data can be determined.