Technology is disclosed for detecting latent defects in non-volatile storage systems. Prior to writing data, a stress voltage is applied to SGS transistors in a 3D memory structure. After applying the stress voltage, the Vt of the SGS transistors are tested to determine whether they meet a criterion. The criterion may be whether a Vt distribution of the SGS transistors falls within an allowed range. If the criterion is not met, then a sub-block mode may be enabled. In the sub-block mode, data is not written to memory cells in a sub-block that contains SGS transistors whose Vt does not meet the criterion. Hence, the possibility of data loss due to defective SGS transistors is avoided. However, in the sub-block mode, data is written to memory cells in a sub-block that does not contain SGS transistors whose Vt does not meet the criterion. Hence, data capacity is preserved.

The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

A RAID storage-device-assisted parity data update system includes a first RAID primary data drive that DMA's second primary data from a host system, and XOR's it with first primary data to produce first interim parity data for a first data stripe. A second RAID primary data drive DMA's fourth primary data from the host system, and XOR's it with third primary data to produce second interim parity data for a second data stripe. A first RAID parity data drive DMAs the first interim parity data and XOR's it with first parity data to produce second parity data for the first data stripe that overwrites the first parity data. A second RAID parity data drive DMA's the second interim parity data and XOR's it with third parity data to produce fourth parity data for the second data stripe that overwrites the third parity data.

A data sampling circuit includes a frequency dividing circuit, a sampling circuit and a selection circuit. The frequency dividing circuit is configured to receive a first data sampling signal, and perform frequency dividing processing on the first data sampling signal to obtain multiple second data sampling signals associated with respective phases; the sampling circuit is configured to receive the multiple second data sampling signals and a first data signal, and sample the first data signal according to the multiple second data sampling signals to obtain multiple second data signals associated with respective phases; and the selection circuit is configured to receive preamble information and mode register set (MRS) information, and select among the multiple second data sampling signals and the plurality of second data signals according to the preamble information and the MRS information to obtain a target data sampling signal and a target data signal respectively.

A data sampling circuit includes a frequency dividing circuit, a sampling circuit and a selection circuit. The frequency dividing circuit is configured to receive a first data sampling signal, and perform frequency dividing processing on the first data sampling signal to obtain multiple second data sampling signals associated with respective phases; the sampling circuit is configured to receive the multiple second data sampling signals and a first data signal, and sample the first data signal according to the multiple second data sampling signals to obtain multiple second data signals associated with respective phases; and the selection circuit is configured to receive preamble information and mode register set (MRS) information, and select among the multiple second data sampling signals and the plurality of second data signals according to the preamble information and the MRS information to obtain a target data sampling signal and a target data signal respectively.

A static random-access memory and a fault detection circuit thereof are provided. The fault detection circuit includes: a bit line coupling circuit, coupled between a first bit line and a second bit line, wherein the bit line coupling circuit is adapted to use a bit line with a lower potential between the first bit line and the second bit line to couple a bit line with a higher potential between the first bit line and the second bit line to a floating low potential in response to performing the data write operation on the memory cell in a test mode by the write circuit; and a fault determining circuit, adapted to, in response to the memory cell being at the test mode, obtain and compare write data and read data corresponding to the write data, to determine whether the SRAM has a Data Retention Fault based on a comparison result.

The present disclosure provides a method of analyzing a semiconductor device. The method includes providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor; connecting a power-supply voltage (V.sub.dd) to the gate electrode to turn on the first transistor, determining a first threshold voltage (V.sub.th) based on the power-supply voltage; switching the power-supply voltage to a ground voltage (V.sub.ss); connecting the ground voltage to the gate electrode to turn on the second transistor; and determining a second threshold voltage based on the ground voltage.

The present disclosure provides a defect inspecting method and a defect inspecting system configured to inspect a memory device. The defect inspecting method includes the operations of: resetting the memory device from a power on state; initializing the memory device; performing a plurality of write operations to a memory cell array of the memory device according to a test pattern; performing a plurality of read operations to the memory cell array of the memory cell to generate a readout pattern; and determining whether a defect existed in the memory device according to the readout pattern.

An octo mode program and erase operation method to reduce test time in a non-volatile memory device. M/8 word lines corresponding to an octo row, among M word lines, are simultaneously selected, and a write voltage is applied to memory cells connected to M/8 word lines corresponding to the octo row. A voltage that is different from the write voltage is applied to memory cells connected to the rest of word lines, except for M/8 word lines corresponding to the octo row, when the octo signal is applied to an address decoder.

A memory system includes a semiconductor storage device and a memory controller including a storage circuit that stores correction value for read voltages in association with the word line, and a control circuit that reads data from the memory cells, performs a correction operation on the read data to determine a number of error bits therein, determines the correction value for each read voltage based on the number of error bits and a ratio of a lower tail fail bit count and an upper tail fail bit count, and stores the correction values for the read voltages in the storage circuit. The lower tail fail bit count represents the number of memory cells in a first state having threshold voltages of an adjacent state, and the upper tail fail bit count represents the number of memory cells in the adjacent state having threshold voltages of the first state.