A semiconductor memory device includes a memory and a memory controller configured to control the memory. The memory controller includes a normal operation control part and a repair part. The normal operation control part is configured to control a normal operation of the memory and includes a plurality of storage spaces used while the normal operation is controlled. The repair part is configured to control a repair operation of the memory and stores faulty addresses detected while the repair operation is controlled into the plurality of storage spaces included in the normal operation control part.

A device for executing a software program by at least one computational device, comprising an interconnected computing grid, connected to the at least one computational device, comprising an interconnected memory grid comprising a plurality of memory units connected by a plurality of memory network nodes, each connected to at least one of the plurality of memory units; wherein configuring the interconnected memory comprises: identifying a bypas sable memory unit; selecting a backup memory unit connected to a backup memory network node; configuring the respective memory network node connected to the bypassable memory unit to forward at least one memory access request, comprising an address in a first address range, to the backup memory network node; and configuring the backup memory network node to access the backup memory unit in response to the at least one memory access request, in addition to accessing the respective at least one memory unit connected thereto.

Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. Groups of cells may be operated in different ways depending, for example, on a relationship between cell plates of the group of cells. Cells may be selected in pairs in order to accommodate an electric current relationship, such as a short, between cells that make up the pair. Cells may be arranged in cell plate groups, and a pair of cells may include a first cell plate from one cell plate group and a second cell plate from the same cell plate group or from another, adjacent cell plate group. So a pair of cell plates may include cell plates from different cell plate groups. The first and second cell plates may be selected as a pair or a group based at least in part on the electric current relationship between the cell plates.

A semiconductor memory device includes a memory cell array, an error correction circuit, an error log register and a control logic circuit. The memory cell array includes a plurality of memory bank arrays and each of the memory bank arrays includes a plurality of pages. The control logic circuit is configured to control the error correction circuit to perform an ECC decoding sequentially on some of the pages designated at least one access address for detecting at least one bit error, in response to a first command received from a memory controller. The control logic circuit performs an error logging operation to write page error information into the error log register and the page error information includes a number of error occurrence on each of the some pages determined from the detecting.

Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.

A semiconductor device, the device including: a first level including control circuits, where the control circuits include a plurality of first transistors and a plurality of metal layers; and a memory level disposed on top of the first level, where the memory level includes an array of memory cells, where each of the memory cells includes at least one second transistor, where the control circuits control access to the array of memory cells, where the first level is bonded to the memory level, where the bonded includes oxide to oxide bonding regions and a plurality of metal to metal bonding regions, and where at least a portion of the array of memory cells is disposed directly above at least one of the plurality of metal to metal bonding regions.

A method of wear leveling for a data storage device is provided. The data storage device includes a non-volatile memory having a plurality of blocks. A portion of the blocks not having any valid data are defined as spare blocks, and the spare blocks are associated with a spare pool. The method includes the steps of: maintaining a management table recording a plurality of physical block numbers and a plurality of block statuses corresponding to the blocks; selecting a first spare block having a first smallest physical block number as a current temporary block; receiving a write command from a host; determining whether data in the write command shall be written into the current temporary block; if false, selecting a second spare block having a second smallest physical block number as a next temporary block; and writing the data into the next temporary block.

A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where the second level is bonded to the first level, where the bonded includes oxide to oxide bonds, where the second transistors each include at least two side-gates, and where through the first metal layers power is provided to at least one of the second transistors.

Data is stored as a first collection of memory blocks distributed across a first set of memory devices. It is determined that a first memory device in the first set is in a degraded state. Data is recovered corresponding to a first memory block in the first collection of memory blocks that is stored in the first memory device, which is configured to include a first number of memory blocks. The recovered data is stored in a second memory device as a new memory block, which is added to the first collection of memory blocks. The first memory device is removed from the first set and reconfigured with a second number of memory blocks that is less than the first number of memory blocks. Memory blocks in a second collection of memory blocks distributed across a second set of memory devices is stored in the reconfigured first memory device.

Methods and apparatus for dynamically adjusting performance of partitioned memory. In one embodiment, the method includes receiving one or more configuration requests for the memory device, determining whether to grant the one or more configuration requests for the memory device, in response to the determining, implementing the one or more configuration requests within the memory device and operating the memory device in accordance with the implementing. The adjusting of the performance for the partitioned memory includes one or more of enabling/disabling refresh operations, altering a refresh rate for the partitioned memory, enabling/disabling error correcting code (ECC) circuitry for the partitioned memory, and/or altering a memory cell architecture for the partitioned memory. Systems and applications that may benefit from the dynamic adjustment of performance are also disclosed.