Apparatuses and methods are disclosed that include ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a second digit line and a second selection component configured to couple the second plate to the second digit line.

Various implementations described herein are directed to a circuit for memory applications. The circuit may include a data storage structure having column multiplexor transistors coupled to complementary bitlines. The circuit may include a wordline shape enhancer having a pair of passgate transistors coupled between the complementary bitlines and a capacitive load.

Systems, methods, and apparatuses for temperature-compensated operation of electronic devices are described. For example, an apparatus for performing voltage compensation on a sense amplifier based on temperature may include a sense amplifier control circuit coupled to the sense amplifier to provide a compensation pulse to the sense amplifier, wherein the sense amplifier operates in a voltage compensation phase during the compensation pulse. The apparatus may determine the compensation pulse responsive to a voltage compensation duration signal that is based on the operating temperature of the apparatus. The voltage compensation occurs when there is no activate command immediately before or immediately after so that compensation duration change do not happen during an activate command from the command decoder.

The present disclosure includes apparatuses and methods for cache operations. An example apparatus includes a memory device including a plurality of subarrays of memory cells, where the plurality of subarrays includes a first subset of the respective plurality of subarrays and a second subset of the respective plurality of subarrays. The memory device includes sensing circuitry coupled to the first subset, the sensing circuitry including a sense amplifier and a compute component. The first subset is configured as a cache to perform operations on data moved from the second subset. The apparatus also includes a cache controller configured to direct a first movement of a data value from a subarray in the second subset to a subarray in the first subset.

A control method, for a memory array, the control method comprises programming the bit-cell of the memory array in a programming stage; and discharging the bit-cell of the memory array in a discharge stage; wherein the programming stage comprises: programming the bit-cell of the memory array with a plurality of programming voltage pulses; wherein the discharge stage comprises: isolating a select line of the bit-cell of the memory array; and generating a programming voltage pulse to the bit-cell of the memory array; wherein the programming stage can be suspended to a suspend stage by a suspend command after the discharge stage; wherein the suspend command is received during one of the plurality of programming voltage pulse.

A circuit for reading a memory cell of a non-volatile memory device provided with a memory array with cells arranged in wordlines and bitlines, among which a first bitline, associated to the memory cell, and a second bitline, has: a first circuit branch associated to the first bitline and a second circuit branch associated to the second bitline, each with a local node, coupled to which is a first dividing capacitor, and a global node, coupled to which is a second dividing capacitor; a decoder stage for coupling the local node to the first or second bitlines and coupling the global node to the local node; and a differential comparator stage supplies an output signal indicative of the datum stored; and a control unit for controlling the decoder stage, the coupling stage, and the differential comparator stage for generation of the output signal.

The present disclosure includes data shift apparatuses and methods. An example apparatus includes a memory device. The example memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. A first shared input/output (I/O) line is configured to selectably couple a first subset of the plurality of sense lines and a second shared I/O line is configured to selectably couple a second subset of the plurality of sense lines. A shift element is configured to selectably couple the first shared I/O line to the second shared I/O line to enable a data shift operation. A controller is configured to direct selectable coupling of the array, the sensing circuitry, and the shift element to enable a shift of a data value from the first shared I/O line to the second shared I/O line.

A dynamic memory array of a DRAM device is operated using a bitline voltage that is greater than the operating (i.e., switching) voltage of a majority of the digital logic circuitry of the DRAM device. The digital logic circuitry is operated using a supply voltage that is lower than the voltage used to store/retrieve data on the bitlines of the DRAM array. This allows lower voltage swing (and thus lower power) digital logic to be used for a majority of the non-storage array logic on the DRAM device—thus reducing the power consumption of the non-storage array logic which, in turn, reduces the power consumption of the DRAM device as a whole.

A sense amplifier circuit includes a bitline node, a sense node, and a feedback circuit which is connected to the bitline node and to the sense node. The feedback circuit includes a cascode-connected pair of transistors configured to isolate the bitline node from an occurrence of a voltage variation on the sense node.

The present invention provides a sensitivity amplifier, its control method, a memory read-write circuit and a memory device. The sensitivity amplifier includes: a first PMOS transistor and a second PMOS transistor, a first NMOS transistor and a second NMOS transistor, a first input/output terminal, and a second input/output terminal; four switch unit, the first PMOS and the first NMOS transistors are respectively connected to the first input/output terminal through one switch unit, the second PMOS and the second NMOS transistors are respectively connected to the second input/output terminal through another switch unit. The switch units configure each PMOS transistor and each NMOS transistor in an amplifier mode or in a diode mode. The first NMOS transistor's gate connects to the bit line, and the second NMOS transistor's gate connects to the reference bit line. The disclosed sensitivity amplifier has improved performance.