A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.

Examples of the present disclosure provide apparatuses and methods for determining a length of a longest element in a memory. An example method comprises determining, using a controller to control sensing circuitry, a length of a longest element of a plurality of variable length elements of a vector stored in a memory array.

Examples of the present disclosure provide apparatuses and methods for determining a length of a longest element in a memory. An example method comprises determining, using a controller to control sensing circuitry, a length of a longest element of a plurality of variable length elements of a vector stored in a memory array.

The instant disclosure relates to masks, methods for making masks, methods for improving film elasticity of masks, and to methods of treating skin with masks. The masks are formed by applying a mask base composition onto a surface, the mask base composition comprising: (i) alginic acid and/or a salt thereof; (ii) hectorite (lithium magnesium sodium silicate); (iii) one or more water-soluble solvents; and (iv) water; and exposing the mask base composition to a crosslinking composition for a time sufficient to crosslink the alginic acid and/or a salt thereof and form a final mask, the crosslinking composition being an aqueous liquid comprising (i) one or more polyvalent cations of one or more metals; and (ii) water. The instant disclosure further relates to masks formed by the disclosed methods and to kits comprising the compositions for making and/or using the masks.

A programmable integrated circuit may include configuration random-access memory (CRAM) cells and lookup table random-access memory (LUTRAM) cells. The programmable integrated circuit may include a CRAM column and at least two LUTRAM columns, a first portion of which is operable as LUTRAM cells and a second portion of which is reused as CRAM cells. Each of the memory cells have a configuration write port and a read port. The configuration write ports of the first portion may be gated, whereas the configuration write ports of the second portion lack gating logic. The read port of the memory cells in the LUTRAM columns may be masked only when the first portion of cells are operated in RAM mode and are currently being accessed.

A method begins with a processing unit of a dispersed storage network (DSN) receiving a read request for a data segment, wherein a data segment is dispersed error encoded in accordance with dispersed error encoding parameters to produce a set of encoded data slices (EDSs) that are distributedly stored in a set of storage units (SUs). The method continues with the processing unit identifying the set of SUs storing the set of EDSs and then identifying a read prioritization scheme for the read request. Based on the read prioritization scheme the method continues by selecting a read threshold number of SUs from the set of SUs storing the set of EDSs; and issuing read slice requests to each SU of the read threshold number of SUs.

A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.