In one embodiment, an apparatus comprises a first connector to couple to a connector of a memory card, the memory card comprising a first sense node to sense a supply voltage at a first location of the memory card, the first connector comprising a voltage supply pin; a ground pin; and a sense pin to couple to the first sense node; a first sense line to couple to the first sense node through the sense pin; and a voltage regulator coupled to the first sense line, the voltage regulator to provide the supply voltage based on feedback received from the first sense node of the memory card via the first sense line.

The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. The magnetic buses include at least a first and a second magnetic bus having opposite magnetization orientations with respect to each other, such that a domain wall separating the opposite magnetization states is pinned in the central region. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus by applying spin orbit and/or transfer torques to the pinned domain wall to alternate the pinned domain wall between two stable configurations, in which each stable configuration corresponds to a different magnetization state of the output magnetic bus in at least a region where the output magnetic bus is joined to the central region.

Systems, devices, and methods related to non-volatile memory are described. A non-volatile memory array may be employed as a main memory array for a system on a chip (SoC) or processor. A controller may interface between the non-volatile memory array and the SoC or processor using a protocol agnostic to characteristics of non-volatile memory operation including different page sizes or access time requirements, etc. A virtual memory bank at the controller may be employed to facilitate operations between the SoC or processor and the non-volatile memory array. The controller may be coupled with a buffer to facilitate rapid data operation, and the controller may be configured to selectively access data at the non-volatile array to account for data stored in the virtual memory bank or the buffer. The controller, the virtual memory bank, and the buffer may be configured on one chip separate from the SoC or processor.

A system including: a master device configured to generate a first signal having a periodic pulse, wherein the first signal includes data; and a slave device including a pin, a delay circuit, a buffer, and a processing circuit, wherein the slave device receives the first signal at the pin, delays the first signal with the delay circuit to generate a second signal having a first delay, delays the first signal with the buffer to generate a third signal having a second delay, and reads the data from the second signal using the third signal at the processing circuit.

In one embodiment, an apparatus comprises a first connector to couple to a connector of a memory card, the memory card comprising a first sense node to sense a supply voltage at a first location of the memory card, the first connector comprising a voltage supply pin; a ground pin; and a sense pin to couple to the first sense node; a first sense line to couple to the first sense node through the sense pin; and a voltage regulator coupled to the first sense line, the voltage regulator to provide the supply voltage based on feedback received from the first sense node of the memory card via the first sense line.

A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.

A memory system includes memory devices sharing a data bus and a control bus and controlling the memory devices through the control bus, wherein the memory devices have different latencies each other, and a controller transceiving a data with the memory devices through the data bus, wherein the controller may transceive a data with the memory devices during a time corresponding to a data burst length for a moment being the each latencies of the memory devices after transmitting same control signals to the memory devices.

A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.

The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. The magnetic buses include at least a first and a second magnetic bus having opposite magnetization orientations with respect to each other, such that a domain wall separating the opposite magnetization states is pinned in the central region. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus by applying spin orbit and/or transfer torques to the pinned domain wall to alternate the pinned domain wall between two stable configurations, in which each stable configuration corresponds to a different magnetization state of the output magnetic bus in at least a region where the output magnetic bus is joined to the central region.

The present disclosure includes apparatuses and methods for data movement. An example apparatus comprises a memory device. The memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. The sensing circuitry includes a sense amplifier and a compute component coupled to a sense line and configured to implement operations. A controller in the memory device is configured to couple to the array and sensing circuitry. A shared I/O line in the memory device is configured to couple a source location and a destination location.