A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

A diamond-based high power nuclear voltaic power source is described. The device is designed to supply electrical power by converting radiation energy from radioisotopes into electric power. In the process of extracting the electric power, the structure of the power source is used to assist the electric charge out from the diamond compartment of the device at high efficiency and high power.

A diamond-based high power nuclear voltaic power source is described. The device is designed to supply electrical power by converting radiation energy from radioisotopes into electric power. In the process of extracting the electric power, the structure of the power source is used to assist the electric charge out from the diamond compartment of the device at high efficiency and high power.

A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity. A thickness the scintillator material is sufficient to protect the photovoltaic portion from significant radiation damage.

A power battery using the energy from a radioactive material. The arrangement uses ZnO as a semiconductor, with energy generated a metal-semiconductor junction. The ZnO is arranged in thin layers. This allows for good durability and relatively high power production.

A power battery using the energy from a radioactive material. The arrangement uses ZnO as a semiconductor, with energy generated a metal-semiconductor junction. The ZnO is arranged in thin layers. This allows for good durability and relatively high power production.

A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.

A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.

Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.

Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.