The present invention discloses an H-3 silicon carbide PN-type radioisotopic battery and a manufacturing method therefor. The radioisotopic battery has a structure including, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped SiC substrate, an N-type SiC epitaxial layer, and a P-type SiC epitaxial layer. A P-type SiC ohmic contact doped layer is disposed on a partial upper area of the P-type SiC epitaxial layer, a P-type ohmic contact electrode is disposed on top of the P-type SiC ohmic contact doped layer, a SiO.sub.2 passivation layer is disposed on an upper area of the P-type SiC epitaxial layer where the P-type ohmic contact doped layer is removed, and an H-3 radioisotope source is provided on the top of the SiO.sub.2 passivation layer.

A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.

Various embodiments of a power source and a method of forming such power source are disclosed. The power source can include an enclosure, a substrate disposed within the enclosure, and radioactive material disposed within the substrate and adapted to emit radioactive particles. The power source can further include a diffusion barrier disposed over an outer surface of the substrate, and a carrier material disposed within the enclosure, where the carrier material includes an oxide material.

Various embodiments of a power source and a method of forming such power source are disclosed. The power source can include an enclosure, a substrate disposed within the enclosure, and radioactive material disposed within the substrate and adapted to emit radioactive particles. The power source can further include a diffusion barrier disposed over an outer surface of the substrate, and a carrier material disposed within the enclosure, where the carrier material includes an oxide material.

Disclosed herein is a device that includes at least one functional semiconductor element; and static electric field source(s) associated with the at least one functional semiconductor element, the static electric field source(s) comprising at least one electret component and having a heterogeneous charge distribution. Also disclosed herein is a device includes a functional semiconductor element; a static electric field source comprising at least one electret element, the static electric field source imparting a static electric field to the functional semiconductor element; and at least one nuclear radiation source for continuously imparting nuclear beta radiation to the at least one electret element and/or the functional semiconductor element. Use of at least a radioactive beta source for replenishing charge in an electret, as well as use of at least a radioactive beta source for simultaneously replenishing charge in an electret and modifying charge mobility of a semiconductor material, are also disclosed. A nuclear battery includes at least one functional semiconductor element; at least one radiation source imparting nuclear radiation to the at least one functional semiconductor element; and at least one electret imparting a static electric field to the at least one functional semiconductor element.

A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.

A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.

The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.