Patent classifications
G21H1/12
Betavoltaics with absorber layer containing coated scintillating particles
A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.
Betavoltaics with absorber layer containing coated scintillating particles
A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.
Power source and method of forming same
Various embodiments of a power source and a method of forming such power source are disclosed. The power source can include an enclosure, a substrate disposed within the enclosure, and radioactive material disposed within the substrate and adapted to emit radioactive particles. The power source can further include a diffusion barrier disposed over an outer surface of the substrate, and a carrier material disposed within the enclosure, where the carrier material includes an oxide material.
Power source and method of forming same
Various embodiments of a power source and a method of forming such power source are disclosed. The power source can include an enclosure, a substrate disposed within the enclosure, and radioactive material disposed within the substrate and adapted to emit radioactive particles. The power source can further include a diffusion barrier disposed over an outer surface of the substrate, and a carrier material disposed within the enclosure, where the carrier material includes an oxide material.
HIGH PERFORMANCE ELECTRIC GENERATORS BOOSTED BY NUCLEAR ELECTRON AVALANCHE (NEA)
Various aspects include electric generators configured to boost electrical output by leveraging electron avalanche generated by a high energy photon radiation source. In various aspects, an electric generator includes a stator and a rotor positioned within the stator, wherein the stator and rotor are configured to generate electric current when the rotor is rotated, and a high energy photon source (e.g., a gamma ray source) positioned and configured to irradiate at least a portion of conductors in the rotor or stator. In some aspects, the stator generates a magnetic field when the electric generator is operating, and the rotor includes armature windings configured to generate electric current when the rotor is rotated. In some aspects, the high energy photon source includes cobalt-60 and/or cesium-137.
HIGH PERFORMANCE ELECTRIC GENERATORS BOOSTED BY NUCLEAR ELECTRON AVALANCHE (NEA)
Various aspects include electric generators configured to boost electrical output by leveraging electron avalanche generated by a high energy photon radiation source. In various aspects, an electric generator includes a stator and a rotor positioned within the stator, wherein the stator and rotor are configured to generate electric current when the rotor is rotated, and a high energy photon source (e.g., a gamma ray source) positioned and configured to irradiate at least a portion of conductors in the rotor or stator. In some aspects, the stator generates a magnetic field when the electric generator is operating, and the rotor includes armature windings configured to generate electric current when the rotor is rotated. In some aspects, the high energy photon source includes cobalt-60 and/or cesium-137.
Perovskite radiovoltaic-photovoltaic battery
A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.
Perovskite radiovoltaic-photovoltaic battery
A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.
Indirect conversion nuclear battery using transparent scintillator material
A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity.
ELECTROPHORETIC DEPOSITION (EPD) OF RADIOISOTOPE AND PHOSPHOR COMPOSITE LAYER FOR HYBRID RADIOISOTOPE BATTERIES AND RADIOLUMINESCENT SURFACES
An electrode for beta-photovoltaic cells includes: a substrate formed of a conductive layer with a thickness ranging between about 10 nm to 1 micron; a composite layer of radioluminescent phosphor with radioisotope particles homogeneously dispersed therein formed on conductive substrate with a thickness ranging between about 1 and 25 microns; and a semiconductor comprising a P-i-N/P-u-N junction or a N-i-P-P junction. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90.