An electrophoretic deposition (EPD) process forms a radioluminescent phosphor and radioisotope composite layer on a conductive surface of a substrate. In the composite layer formed, the particles of radioisotope are homogeneously dispersed with the radioluminescent phosphor. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90. By applying the composite layer using the EPD process, the electrode can be configured for betavoltaic, beta-photovoltaic and photovoltaic cells according to further embodiments. A direct bandgap semiconductor device can convert betas and/or photons emitted from composite layer. Methods and choice of materials and components produces a hybrid radioisotope battery, conversion of photons and nuclear decay products, or radioluminescent surfaces.

An electrophoretic deposition (EPD) process forms a radioluminescent phosphor and radioisotope composite layer on a conductive surface of a substrate. In the composite layer formed, the particles of radioisotope are homogeneously dispersed with the radioluminescent phosphor. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90. By applying the composite layer using the EPD process, the electrode can be configured for betavoltaic, beta-photovoltaic and photovoltaic cells according to further embodiments. A direct bandgap semiconductor device can convert betas and/or photons emitted from composite layer. Methods and choice of materials and components produces a hybrid radioisotope battery, conversion of photons and nuclear decay products, or radioluminescent surfaces.

An electrophoretic deposition (EPD) process forms a radioluminescent phosphor and radioisotope composite layer on a conductive surface of a substrate. In the composite layer formed, the particles of radioisotope are homogeneously dispersed with the radioluminescent phosphor. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90. By applying the composite layer using the EPD process, the electrode can be configured for betavoltaic, beta-photovoltaic and photovoltaic cells according to further embodiments. A direct bandgap semiconductor device can convert betas and/or photons emitted from composite layer. Methods and choice of materials and components produces a hybrid radioisotope battery, conversion of photons and nuclear decay products, or radioluminescent surfaces.

Embodiments of the present disclosure relate to compositions including a doped material, batteries including the composition, photovoltaic devices including the battery, and the like.

Embodiments of the present disclosure relate to compositions including a doped material, batteries including the composition, photovoltaic devices including the battery, and the like.

An electrode for beta-photovoltaic cells includes: a substrate formed of a conductive layer with a thickness ranging between about 10 nm to 1 micron; a composite layer of radioluminescent phosphor with radioisotope particles homogeneously dispersed therein formed on conductive substrate with a thickness ranging between about 1 and 25 microns; and a semiconductor comprising a P-i-N/P-u-N junction or a N-i-P-P junction. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90.

An electrode for beta-photovoltaic cells includes: a substrate formed of a conductive layer with a thickness ranging between about 10 nm to 1 micron; a composite layer of radioluminescent phosphor with radioisotope particles homogeneously dispersed therein formed on conductive substrate with a thickness ranging between about 1 and 25 microns; and a semiconductor comprising a P-i-N/P-u-N junction or a N-i-P-P junction. The radioisotope may be a beta-emitter, such as Ni-63, H-3, Pm-147, or Sr-90/Y-90.

Embodiments of the present disclosure are directed to a phototherapy eye device. In an example, the phototherapy eye device includes a number of radioluminescent light sources and an anchor. Each radioluminescent light source includes an interior chamber coated with phosphor material, such as zinc sulfide, and containing a radioisotope material, such as gaseous tritium. The volume, shape, phosphor material, and radioisotope material are selected for emission of light at a particular wavelength and delivering a particular irradiance on the retina (when implanted in an eyeball). The wavelength is in the range of 400 to 600 nm and the irradiance is substantially 10.sup.9 to 10.sup.11 photons per second per cm.sup.2.

Embodiments of the present disclosure are directed to a phototherapy eye device. In an example, the phototherapy eye device includes a number of radioluminescent light sources and an anchor. Each radioluminescent light source includes an interior chamber coated with phosphor material, such as zinc sulfide, and containing a radioisotope material, such as gaseous tritium. The volume, shape, phosphor material, and radioisotope material are selected for emission of light at a particular wavelength and delivering a particular irradiance on the retina (when implanted in an eyeball). The wavelength is in the range of 400 to 600 nm and the irradiance is substantially 10.sup.9 to 10.sup.11 photons per second per cm.sup.2.

A gaseous tritium light source (GTLS), which has a hermetically sealed outer sleeve made of glass, more particularly borosilicate glass. A high durability and lighting intensity is produced due to the fact that at least some sections of the outer sleeve have an outer coating applied directly to the outer surface of the outer sleeve serving as a reflective layer made of a metal, wherein the outer coating has an epitaxial structure and wherein the metal has a reflectance of >70% for visible light.