A device for controlling trapped ions includes a substrate. A metal layer is disposed over the substrate. An electrode of an ion trap is disposed over the metal layer, the electrode being configured to trap one or more ions in a space above the electrode. An electrical insulator is disposed between the metal layer and the electrode. The electrical insulator has an upper surface facing towards the electrode and a lower surface facing towards the metal layer. An etching rate of the electrical insulator increases along a direction pointing from the upper surface to the lower surface.

Qubit devices require fast operation, long coherence, and large scalability to be viable for implementation in quantum computing systems. A qubit platform device having long coherence, scalability, and fast operation includes a substrate, or trap region, configured to structurally support solid neon thereon. A trap electrode is configured to provide a trap voltage to the trap region and which creates a confining electrical field to a confining region adjacent to the trap region. The confining region being a region of space to confine an electron therein, confining the electron against the solid neon. First and second sets of guard electrodes are configured to provide variable electric potentials to first and second guard regions to allow for trapping and manipulation of a single electron in the confining region.

Fermions are the building blocks of matter. Here, we disclose a robust quantum register composed of hundreds of fermionic atom pairs trapped in an optical lattice. With each fermion pair forming a spin-singlet, the qubit is realized as a set of near-degenerate, symmetry-protected two-particle wavefunctions describing common and relative motion. Degeneracy is lifted by the atomic recoil energy, which depends on mass and lattice wavelength, thereby rendering two-fermion motional qubits insensitive to noise of the confining potential. The quantum coherence can last longer than ten seconds. Universal control is provided by modulating interactions between the atoms. Via state-dependent, coherent conversion of free atom pairs into tightly bound molecules, we tune the speed of motional entanglement over three orders of magnitude, yielding 10.sup.4 Ramsey oscillations within the coherence time. For site-resolved motional state readout, pairs are coherently split into their constituent fermions via a double-well, creating entangled Bell pairs.

Atomic object confinement apparatuses that include RF busses and systems including atomic object confinement apparatuses that include RF busses are provided. An example atomic object confinement apparatus comprises RF rail electrodes and an RF bus electrode(s). The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus and the RF bus electrodes are disposed in a perimeter zone disposed about the central zone. The RF rail electrodes and the RF bus electrode(s) are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode(s).

A device for controlling an ion, having an electrode arrangement configured to generate an electric field to trap the ion, wherein a plurality of openings are defined in the electrode arrangement, and an optical arrangement configured to transmit a plurality of output optical signals of different wavelengths to the trapped ion to control the trapped ion, wherein the optical arrangement includes a plurality of wavelength filters configured to receive at least one input optical signal, wherein, for each wavelength filter, the wavelength filter is configured to filter the at least one input optical signal to generate a respective output optical signal of the plurality of output optical signals, and wherein the optical arrangement is configured to transmit the respective output optical signal to the trapped ion through a respective opening of the plurality of openings, the respective output optical signal being defined by a respective wavelength of the different wavelengths.

A technique is disclosed for electro-optically inducing a force to fabricated samples and/or devices with laser light. The technique uses the interaction of the oscillating electric field of the laser beam in opposition with the electric field produced by an appropriate electric charge carrier to achieve a net repulsive (or attractive) force on the component holding the electric charge. In one embodiment, force is achieved when the field near the charge carrier is modulated at a subharmonic of the electric field oscillation frequency of the laser and the relative phases of the light field and electric charge carrier field are controlled to provide optimal repulsion/attraction. The effect is scalable by applying the technique to an array of charge carrier fields sequentially as well as using higher power lasers and higher carrier field voltages.

Atomic object confinement apparatuses that include RF interior electrodes and systems including atomic object confinement apparatuses that include RF interior electrodes are provided. An example atomic object confinement apparatus comprises RF rail electrodes and a plurality of RF interior electrodes. The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus and the each of the RF interior electrodes are disposed in a respective one of the confinement segments. The RF rail electrodes and the RF interior electrodes are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF interior electrodes.

Aspects of the present disclosure may include a method and/or a system for identifying an ion chain having a plurality of trapped ions, selecting at least two non-consecutive trapped ions in the ion chain for implementing a qubit, applying at least a first Raman beam to shuttle at least one neighbor ion of the at least two non-consecutive trapped ions from a ground state to a metastable state, and applying at least a second Raman beam to one or more of the at least two non-consecutive trapped ions, after shuttling the at least one neighbor ion to the metastable state, to transition from a first manifold to a second manifold.

A loading assembly configured for providing atomic objects to an atomic object confinement apparatus is provided. The loading assembly comprises one or more ovens. Each oven (a) comprises a respective oven nozzle and (b) is configured to generate a respective atomic flux of a respective atomic species via the respective oven nozzle. The loading assembly comprises a mirror array and a magnet array configured to, when optical beams are provided to the mirror and magnet assembly, generate a two-dimensional magneto-optical trap (2D MOT). The 2D MOT is configured to generate a substantially collimated atomic beam from the respective atomic fluxes generated by the one or more ovens. The loading assembly further comprises a differential pumping tube defining a beam path. The differential pumping tube is configured to provide the substantially collimated atomic beam via the beam path. The respective oven nozzle of each of the one or more ovens is misaligned with the beam path and the 2D MOT is configured to provide the substantially collimated atomic beam in alignment with the beam path.

Atomic object confinement apparatuses that include RF busses and systems including atomic object confinement apparatuses that include RF busses are provided. An example atomic object confinement apparatus comprises RF rail electrodes and an RF bus electrode(s). The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus and the RF bus electrodes are disposed in a perimeter zone disposed about the central zone. The RF rail electrodes and the RF bus electrode(s) are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode(s).