A collimator according to an embodiment is a collimator for use in an X-ray CT apparatus and includes a collimator module and resin. The collimator module includes a first scattered ray eliminating part and a second scattered ray eliminating part. The resin is provided between the first scattered ray eliminating part and the second scattered ray eliminating part and is configured to hold the first scattered ray eliminating part and the second scattered ray eliminating part.

A collimator according to an embodiment is a collimator for use in an X-ray CT apparatus and includes a collimator module and resin. The collimator module includes a first scattered ray eliminating part and a second scattered ray eliminating part. The resin is provided between the first scattered ray eliminating part and the second scattered ray eliminating part and is configured to hold the first scattered ray eliminating part and the second scattered ray eliminating part.

Embodiments may relate an x-ray filter. The x-ray filter may be configured to be positioned between an x-ray source output and a device under test (DUT) that is to be x-rayed. The x-ray filter may include at least 80% titanium (Ti) by weight. Other embodiments may be described or claimed.

An x-ray window can include a boron-film 12 and an aluminum-film 52 spanning an aperture 15 of a support-frame 11. The boron-film 12 and the aluminum-film 52 can be the only films, or the primary films, spanning the aperture. The boron-film 12 can include boron and hydrogen. An annular-film 32 can adjoin the support-frame 11, on an opposite side of the support-frame 11 from the boron-film 12. The annular-film 32 can include boron and hydrogen. The annular-film 32 can have the same material composition as, and can be similar in thickness with, the boron-film 12.

An x-ray window can include a boron-film 12 and an aluminum-film 52 spanning an aperture 15 of a support-frame 11. The boron-film 12 and the aluminum-film 52 can be the only films, or the primary films, spanning the aperture. The boron-film 12 can include boron and hydrogen. An annular-film 32 can adjoin the support-frame 11, on an opposite side of the support-frame 11 from the boron-film 12. The annular-film 32 can include boron and hydrogen. The annular-film 32 can have the same material composition as, and can be similar in thickness with, the boron-film 12.

A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

An x-ray beam control apparatus including at least one moveable x-ray attenuating member, and at least one position sensor, wherein the position sensor is configured to contactlessly detect movement of at least one of the attenuating members and to output a signal indicative of the position of the attenuating member.