A method of treating a particle beam is disclosed, of interest in particular for mass spectrometry for .sup.14C. A particle beam including positive ions is passed through a charge exchange cell containing a target gas. The target gas is electrically insulating at room temperature and pressure. At least some of the positive ions of the particle beam are converted to negative ions by interaction with the target gas. The particle beam incident at the charge exchange cell includes molecules and/or molecular ions which interact with the target gas to reduce the concentration of molecules as a result of repeated collisions with particles of the target gas. A corresponding mass spectrometry system is also disclosed.

A method of treating a particle beam is disclosed, of interest in particular for mass spectrometry for .sup.14C. A particle beam including positive ions is passed through a charge exchange cell containing a target gas. The target gas is electrically insulating at room temperature and pressure. At least some of the positive ions of the particle beam are converted to negative ions by interaction with the target gas. The particle beam incident at the charge exchange cell includes molecules and/or molecular ions which interact with the target gas to reduce the concentration of molecules as a result of repeated collisions with particles of the target gas. A corresponding mass spectrometry system is also disclosed.

A charge stripping film for a charge stripping device of ion beam is a carbon film produced by annealing a polymer film, and has a film thickness of 10 m to 150 m, an area of at least 4 cm.sup.2, and an atomic concentration of carbon of at least 97%. A charge stripping film for a charge stripping device of ion beam is a carbon film having a thermal conductivity in a film surface direction at 25 C. of at least 300 W/mK, and has a film thickness of 10 m to 150 m, an area of at least 4 cm.sup.2, and an atomic concentration of carbon of at least 97%.

A charge stripping film for a charge stripping device of ion beam is a carbon film produced by annealing a polymer film, and has a film thickness of 10 m to 150 m, an area of at least 4 cm.sup.2, and an atomic concentration of carbon of at least 97%. A charge stripping film for a charge stripping device of ion beam is a carbon film having a thermal conductivity in a film surface direction at 25 C. of at least 300 W/mK, and has a film thickness of 10 m to 150 m, an area of at least 4 cm.sup.2, and an atomic concentration of carbon of at least 97%.

A negative ion-based neutral beam injector comprising a negative ion source, accelerator and neutralizer to produce about a 5 MW neutral beam with energy of about 0.50 to 1.0 MeV. The ions produced by the ion source are pre-accelerated before injection into a high energy accelerator by an electrostatic multi-aperture grid pre-accelerator, which is used to extract ion beams from the plasma and accelerate to some fraction of the required beam energy. The beam from the ion source passes through a pair of deflecting magnets, which enable the beam to shift off axis before entering the high energy accelerator. After acceleration to full energy, the beam enters the neutralizer where it is partially converted into a neutral beam. The remaining ion species are separated by a magnet and directed into electrostatic energy converters. The neutral beam passes through a gate valve and enters a plasma chamber.

A system for reducing surface and embedded charge in a substrate includes a substrate support configured to support a substrate. A vacuum ultraviolet (VUV) assembly is arranged adjacent to the substrate and includes a housing and a VUV lamp that is connected to the housing and that generates and directs ultraviolet (UV) light at the substrate. A movement device is configured to move at least one of the VUV assembly and the substrate support during exposure of the substrate to the UV light to reduce surface and embedded charge in the substrate.

A system for reducing surface and embedded charge in a substrate includes a substrate support configured to support a substrate. A vacuum ultraviolet (VUV) assembly is arranged adjacent to the substrate and includes a housing and a VUV lamp that is connected to the housing and that generates and directs ultraviolet (UV) light at the substrate. A movement device is configured to move at least one of the VUV assembly and the substrate support during exposure of the substrate to the UV light to reduce surface and embedded charge in the substrate.

A charge stripping film for an ion beam includes a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25 C. of at least 800 W/mK, or a laminated body of the graphitic film. The charge stripping film has a thickness of 100 nm to 10 m, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of at least 110.sup.5/K, and an area of at least 4 cm.sup.2.

A charge stripping film for an ion beam includes a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25 C. of at least 800 W/mK, or a laminated body of the graphitic film. The charge stripping film has a thickness of 100 nm to 10 m, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of at least 110.sup.5/K, and an area of at least 4 cm.sup.2.

An extreme ultraviolet light generation device is to generate extreme ultraviolet light by irradiating a target with a pulse laser beam and thereby turning the target into plasma. The device may include a chamber, a magnet configured to form a magnetic field in the chamber, and an ion catcher including a collision unit disposed so that ions guided by the magnetic field collide with the collision unit.